ZnSe:N epilayers grown by low-pressure metalorganic chemical vapor deposition using a radio frequency plasma source

E. D. Sim; Y. S. Joh; J. H. Song; H. L. Park; S. H. Lee; K. Jeong; S. K. Chang

doi:10.1002/1521-3951(200201)229:1<213::AID-PSSB213>3.0.CO;2-B

ZnSe:N epilayers grown by low-pressure metalorganic chemical vapor deposition using a radio frequency plasma source

E. D. Sim, Y. S. Joh, J. H. Song, H. L. Park, S. H. Lee, K. Jeong, S. K. Chang

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Using nitrogen radio-frequency (RF) plasma operated in low-pressure metal-organic chemical vapor deposition (LP-MOCVD), nitrogen-doped ZnSe epilayers were grown and their optical properties were investigated. In the low-temperature photoluminescence (PL) of nitrogen-doped ZnSe epilayers, two emissions were observed, attributed to a nitrogen acceptor-bound exciton (I₁) at 2.792 eV and a donor-acceptor pair (DAP) at 2.70 eV. The characteristics of nitrogen acceptorbound excitons and DAP emissions under excitation power dependent PL spectra were discussed. From theses results, we found that nitrogen was successfully incorporated into selenium sites and then acted as an acceptor. In addition, we obtained the net acceptor concentration 1.15 × 10¹⁸ cm^-3 by capacitance-voltage profiling.

Original language	English
Pages (from-to)	213-216
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	229
Issue number	1
DOIs	https://doi.org/10.1002/1521-3951(200201)229:1<213::AID-PSSB213>3.0.CO;2-B
Publication status	Published - 2002

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/1521-3951(200201)229:1<213::AID-PSSB213>3.0.CO;2-B

Cite this

@article{713a9f8f30b6485a9305ffc1dab35077,

title = "ZnSe:N epilayers grown by low-pressure metalorganic chemical vapor deposition using a radio frequency plasma source",

abstract = "Using nitrogen radio-frequency (RF) plasma operated in low-pressure metal-organic chemical vapor deposition (LP-MOCVD), nitrogen-doped ZnSe epilayers were grown and their optical properties were investigated. In the low-temperature photoluminescence (PL) of nitrogen-doped ZnSe epilayers, two emissions were observed, attributed to a nitrogen acceptor-bound exciton (I1) at 2.792 eV and a donor-acceptor pair (DAP) at 2.70 eV. The characteristics of nitrogen acceptorbound excitons and DAP emissions under excitation power dependent PL spectra were discussed. From theses results, we found that nitrogen was successfully incorporated into selenium sites and then acted as an acceptor. In addition, we obtained the net acceptor concentration 1.15 × 1018 cm-3 by capacitance-voltage profiling.",

author = "Sim, {E. D.} and Joh, {Y. S.} and Song, {J. H.} and Park, {H. L.} and Lee, {S. H.} and K. Jeong and Chang, {S. K.}",

year = "2002",

doi = "10.1002/1521-3951(200201)229:1<213::AID-PSSB213>3.0.CO;2-B",

language = "English",

volume = "229",

pages = "213--216",

journal = "Physica Status Solidi (B) Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "1",

}

TY - JOUR

T1 - ZnSe:N epilayers grown by low-pressure metalorganic chemical vapor deposition using a radio frequency plasma source

AU - Sim, E. D.

AU - Joh, Y. S.

AU - Song, J. H.

AU - Park, H. L.

AU - Lee, S. H.

AU - Jeong, K.

AU - Chang, S. K.

PY - 2002

Y1 - 2002

N2 - Using nitrogen radio-frequency (RF) plasma operated in low-pressure metal-organic chemical vapor deposition (LP-MOCVD), nitrogen-doped ZnSe epilayers were grown and their optical properties were investigated. In the low-temperature photoluminescence (PL) of nitrogen-doped ZnSe epilayers, two emissions were observed, attributed to a nitrogen acceptor-bound exciton (I1) at 2.792 eV and a donor-acceptor pair (DAP) at 2.70 eV. The characteristics of nitrogen acceptorbound excitons and DAP emissions under excitation power dependent PL spectra were discussed. From theses results, we found that nitrogen was successfully incorporated into selenium sites and then acted as an acceptor. In addition, we obtained the net acceptor concentration 1.15 × 1018 cm-3 by capacitance-voltage profiling.

AB - Using nitrogen radio-frequency (RF) plasma operated in low-pressure metal-organic chemical vapor deposition (LP-MOCVD), nitrogen-doped ZnSe epilayers were grown and their optical properties were investigated. In the low-temperature photoluminescence (PL) of nitrogen-doped ZnSe epilayers, two emissions were observed, attributed to a nitrogen acceptor-bound exciton (I1) at 2.792 eV and a donor-acceptor pair (DAP) at 2.70 eV. The characteristics of nitrogen acceptorbound excitons and DAP emissions under excitation power dependent PL spectra were discussed. From theses results, we found that nitrogen was successfully incorporated into selenium sites and then acted as an acceptor. In addition, we obtained the net acceptor concentration 1.15 × 1018 cm-3 by capacitance-voltage profiling.

UR - http://www.scopus.com/inward/record.url?scp=0035994376&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035994376&partnerID=8YFLogxK

U2 - 10.1002/1521-3951(200201)229:1<213::AID-PSSB213>3.0.CO;2-B

DO - 10.1002/1521-3951(200201)229:1<213::AID-PSSB213>3.0.CO;2-B

M3 - Article

AN - SCOPUS:0035994376

SN - 0370-1972

VL - 229

SP - 213

EP - 216

JO - Physica Status Solidi (B) Basic Research

JF - Physica Status Solidi (B) Basic Research

IS - 1

ER -

ZnSe:N epilayers grown by low-pressure metalorganic chemical vapor deposition using a radio frequency plasma source

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this