ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor

Engineering

• Thin Films 60%
• Atomic Layer Deposition 60%
• Growth Condition 30%
• Microstructure 20%
• Channel Layer 20%
• Active Channel 20%
• Applications 20%
• Experimental Result 10%
• Reactant 10%
• Growth Temperature 10%
• Preferred Orientation 10%
• Room Temperature 10%
• Contamination 10%
• Film Property 10%
• Active Layer 10%
• Metal Precursor 10%
• Low Growth Temperature 10%
• Water 10%

Material Science

• ZnO 100%
• Thin Films 60%
• Thin-Film Transistor 60%
• Liquid Films 30%
• Tennessine 30%
• Microstructure 20%

Chemistry

• Atomic Layer Epitaxy 60%
• Liquid Film 30%
• Electrical Property 20%
• Microstructure 20%
• X-Ray Diffraction 20%
• Application 20%
• Resistivity 20%
• Compound Mobility 10%
• Water Type 10%
• Purity 10%
• Ambient Reaction Temperature 10%
• Carbon 10%
• Chemical Property 10%