In this report, ZnO single nanowire (NW)-based devices were fabricated on the same nanowire by e-beam lithography so that both sides had Ohmic contact and one side had Schottky contact. Information about the mechanism for low-power UV detection by these devices was unambiguously provided by I-V measurements. Adsorption and desorption of oxygen molecules at the NW surface are responsible for the UV detection by the device with Ohmic contacts on both sides. Barrier height modulations and interface states are responsible for UV detection by the device with Schottky contact on one side.
|Journal||Applied Physics Letters|
|Publication status||Published - 2010 Jul 12|
Bibliographical noteFunding Information:
This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (Grant No. R32-20031). Also this work was supported by the Korea Science and Engineering Foundation (KOSEF) (Grant No. R01-2007-000-20143-0).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)