ZnO single nanowire-based UV detectors

Sachindra Nath Das; Kyeong Ju Moon; Jyoti Prakash Kar; Ji Hyuk Choi; Junjie Xiong; Tae Il Lee; Jae Min Myoung

doi:10.1063/1.3464287

ZnO single nanowire-based UV detectors

Sachindra Nath Das, Kyeong Ju Moon, Jyoti Prakash Kar, Ji Hyuk Choi, Junjie Xiong, Tae Il Lee, Jae Min Myoung

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

120 Citations (Scopus)

Abstract

In this report, ZnO single nanowire (NW)-based devices were fabricated on the same nanowire by e-beam lithography so that both sides had Ohmic contact and one side had Schottky contact. Information about the mechanism for low-power UV detection by these devices was unambiguously provided by I-V measurements. Adsorption and desorption of oxygen molecules at the NW surface are responsible for the UV detection by the device with Ohmic contacts on both sides. Barrier height modulations and interface states are responsible for UV detection by the device with Schottky contact on one side.

Original language	English
Article number	022103
Journal	Applied Physics Letters
Volume	97
Issue number	2
DOIs	https://doi.org/10.1063/1.3464287
Publication status	Published - 2010 Jul 12

Bibliographical note

Funding Information:
This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (Grant No. R32-20031). Also this work was supported by the Korea Science and Engineering Foundation (KOSEF) (Grant No. R01-2007-000-20143-0).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3464287

Cite this

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abstract = "In this report, ZnO single nanowire (NW)-based devices were fabricated on the same nanowire by e-beam lithography so that both sides had Ohmic contact and one side had Schottky contact. Information about the mechanism for low-power UV detection by these devices was unambiguously provided by I-V measurements. Adsorption and desorption of oxygen molecules at the NW surface are responsible for the UV detection by the device with Ohmic contacts on both sides. Barrier height modulations and interface states are responsible for UV detection by the device with Schottky contact on one side.",

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note = "Funding Information: This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (Grant No. R32-20031). Also this work was supported by the Korea Science and Engineering Foundation (KOSEF) (Grant No. R01-2007-000-20143-0).",

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AU - Kar, Jyoti Prakash

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AU - Xiong, Junjie

AU - Lee, Tae Il

AU - Myoung, Jae Min

N1 - Funding Information: This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (Grant No. R32-20031). Also this work was supported by the Korea Science and Engineering Foundation (KOSEF) (Grant No. R01-2007-000-20143-0).

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N2 - In this report, ZnO single nanowire (NW)-based devices were fabricated on the same nanowire by e-beam lithography so that both sides had Ohmic contact and one side had Schottky contact. Information about the mechanism for low-power UV detection by these devices was unambiguously provided by I-V measurements. Adsorption and desorption of oxygen molecules at the NW surface are responsible for the UV detection by the device with Ohmic contacts on both sides. Barrier height modulations and interface states are responsible for UV detection by the device with Schottky contact on one side.

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ZnO single nanowire-based UV detectors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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