ZnO nanowire transistor inverter using top-gate electrodes with different work functions

Young Tack Lee, Jong Keun Kim, Ryong Ha, Heon Jin Choi, Seongil Im

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


ZnO-nanowire field effect transistors (FETs) with a top gate Al 2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.

Original languageEnglish
Article number153507
JournalApplied Physics Letters
Issue number15
Publication statusPublished - 2011 Oct 10

Bibliographical note

Funding Information:
*This work was supported by the Agency for Defence Development (ADD), Taejon, Korea, and the Automatic Control Research Center (ACRC) in Seoul National University, Seoul, Korea.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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