ZnO nanowire transistor inverter using top-gate electrodes with different work functions

Young Tack Lee; Jong Keun Kim; Ryong Ha; Heon Jin Choi; Seongil Im

doi:10.1063/1.3651753

ZnO nanowire transistor inverter using top-gate electrodes with different work functions

Young Tack Lee, Jong Keun Kim, Ryong Ha, Heon Jin Choi, Seongil Im

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

ZnO-nanowire field effect transistors (FETs) with a top gate Al ₂O₃ dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (V_T) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their V_T values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.

Original language	English
Article number	153507
Journal	Applied Physics Letters
Volume	99
Issue number	15
DOIs	https://doi.org/10.1063/1.3651753
Publication status	Published - 2011 Oct 10

Bibliographical note

Funding Information:
*This work was supported by the Agency for Defence Development (ADD), Taejon, Korea, and the Automatic Control Research Center (ACRC) in Seoul National University, Seoul, Korea.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3651753

Cite this

@article{2bf581ff9b454aba89d42fdd62a997d3,

title = "ZnO nanowire transistor inverter using top-gate electrodes with different work functions",

abstract = "ZnO-nanowire field effect transistors (FETs) with a top gate Al 2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.",

author = "{Tack Lee}, Young and {Keun Kim}, Jong and Ryong Ha and Choi, {Heon Jin} and Seongil Im",

note = "Funding Information: *This work was supported by the Agency for Defence Development (ADD), Taejon, Korea, and the Automatic Control Research Center (ACRC) in Seoul National University, Seoul, Korea.",

year = "2011",

month = oct,

day = "10",

doi = "10.1063/1.3651753",

language = "English",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "15",

}

TY - JOUR

T1 - ZnO nanowire transistor inverter using top-gate electrodes with different work functions

AU - Tack Lee, Young

AU - Keun Kim, Jong

AU - Ha, Ryong

AU - Choi, Heon Jin

AU - Im, Seongil

N1 - Funding Information: *This work was supported by the Agency for Defence Development (ADD), Taejon, Korea, and the Automatic Control Research Center (ACRC) in Seoul National University, Seoul, Korea.

PY - 2011/10/10

Y1 - 2011/10/10

N2 - ZnO-nanowire field effect transistors (FETs) with a top gate Al 2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.

AB - ZnO-nanowire field effect transistors (FETs) with a top gate Al 2O3 dielectric and different metal electrodes were fabricated to form a low voltage electrical inverter. Two FETs with Pd and Ni/Ti gates whose respective work functions are so different as 5.3 and 4.3 eV were chosen to play as driver and load, since such different work functions lead to a threshold voltage (VT) difference of at least 1 V between the two FETs. Our FETs with Pd and Ni/Ti, respectively, showed 0.8 and -0.3 V for their VT values, while our inverter exhibited a desirable voltage transfer characteristics with voltage gain of over 15 during low voltage electrical gating.

UR - http://www.scopus.com/inward/record.url?scp=80054978322&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054978322&partnerID=8YFLogxK

U2 - 10.1063/1.3651753

DO - 10.1063/1.3651753

M3 - Article

AN - SCOPUS:80054978322

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 153507

ER -

ZnO nanowire transistor inverter using top-gate electrodes with different work functions

Abstract

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