ZnO nanowire and mesowire for logic inverter fabrication

Young Tack Lee, Seongil Im, Ryong Ha, Heon Jin Choi

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


We report on a ZnO-based logic inverter utilizing two field effect transistors (FETs), whose respective channel has different wire-diameters under a top-gate dielectric of poly-4-vinylphenol. One FET with nanowire (160 nm) channel displayed an abrupt drain current (ID) increase and fast ID saturation near its positive threshold voltage (Vth) while the other FET with mesowire (770 nm) showed a thin-film transistor-like behavior and a negative Vth. When the nanowire and mesowire FETs were, respectively, used as a driver and a load, our inverter demonstrated an excellent voltage gain as high as 25 under a supply voltage of 20 V.

Original languageEnglish
Article number123506
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2010 Sept 20

Bibliographical note

Funding Information:
Authors acknowledge the financial support from NRF (NRL program: Grant No. 2009-8-0403), KOSEF through the National Core Research Center for Nanomedical Technology (Grant No. R15-2004-024-00000-0), Brain Korea 21 Program, and Hi Seoul Science/Humanities Fellowship.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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