ZnO homojunction core-shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition

Kyung Yong Ko; Hyemin Kang; Jusang Park; Byung Wook Min; Hee Sung Lee; Seongil Im; Ji Yeon Kang; Jae Min Myoung; Jae Hun Jung; Soo Hyun Kim; Hyungjun Kim

doi:10.1016/j.sna.2014.02.005

ZnO homojunction core-shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition

Kyung Yong Ko, Hyemin Kang, Jusang Park, Byung Wook Min, Hee Sung Lee, Seongil Im, Ji Yeon Kang, Jae Min Myoung, Jae Hun Jung, Soo Hyun Kim, Hyungjun Kim

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We investigated the device properties of ZnO homojunction core-shell nanorods (NRs) ultraviolet (UV) photo-detecting diodes depending on fabrication process. ZnO homojunction core-shell NRs fabrication was realized by atomic layer deposition (ALD) of highly conformal ZnO shell with high concentration of nitrogen (HNZO) over hydrothermally synthesized n-ZnO NRs. ALD of HNZO was carried out using diethyl zinc (DEZ) and diluted ammonium hydroxide (NH ₄OH) as a Zn precursor and reactant/nitrogen source, respectively. On the electrical analysis, HNZO films is found to be weak n-type or ambiguous and, finally this HNZO attributed the rectifying property at the junction with n-type ZnO NRs. ZnO planar device was also fabricated as a comparative reference. Comparative study between core-shell and planar device has shown that the responsivity of the core-shell device was turned out to be about two times higher than that of planar device. Photoluminescence (PL) intensity of core-shell device was significantly reduced compared to that of planar device for overall region of wavelength, which was attributed to rapid separation of photo-generated carriers. The carrier transport mechanism in core-shell NR device is discussed based on band bending phenomenon.

Original language	English
Pages (from-to)	197-204
Number of pages	8
Journal	Sensors and Actuators, A: Physical
Volume	210
DOIs	https://doi.org/10.1016/j.sna.2014.02.005
Publication status	Published - 2014 Apr 1

Bibliographical note

Funding Information:
This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2013K000173 ). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) ( 2011-0028594 )

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/j.sna.2014.02.005

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title = "ZnO homojunction core-shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition",

abstract = "We investigated the device properties of ZnO homojunction core-shell nanorods (NRs) ultraviolet (UV) photo-detecting diodes depending on fabrication process. ZnO homojunction core-shell NRs fabrication was realized by atomic layer deposition (ALD) of highly conformal ZnO shell with high concentration of nitrogen (HNZO) over hydrothermally synthesized n-ZnO NRs. ALD of HNZO was carried out using diethyl zinc (DEZ) and diluted ammonium hydroxide (NH 4OH) as a Zn precursor and reactant/nitrogen source, respectively. On the electrical analysis, HNZO films is found to be weak n-type or ambiguous and, finally this HNZO attributed the rectifying property at the junction with n-type ZnO NRs. ZnO planar device was also fabricated as a comparative reference. Comparative study between core-shell and planar device has shown that the responsivity of the core-shell device was turned out to be about two times higher than that of planar device. Photoluminescence (PL) intensity of core-shell device was significantly reduced compared to that of planar device for overall region of wavelength, which was attributed to rapid separation of photo-generated carriers. The carrier transport mechanism in core-shell NR device is discussed based on band bending phenomenon.",

author = "Ko, {Kyung Yong} and Hyemin Kang and Jusang Park and Min, {Byung Wook} and Lee, {Hee Sung} and Seongil Im and Kang, {Ji Yeon} and Myoung, {Jae Min} and Jung, {Jae Hun} and Kim, {Soo Hyun} and Hyungjun Kim",

note = "Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2013K000173 ). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) ( 2011-0028594 ) ",

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doi = "10.1016/j.sna.2014.02.005",

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T1 - ZnO homojunction core-shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition

AU - Ko, Kyung Yong

AU - Kang, Hyemin

AU - Park, Jusang

AU - Min, Byung Wook

AU - Lee, Hee Sung

AU - Im, Seongil

AU - Kang, Ji Yeon

AU - Myoung, Jae Min

AU - Jung, Jae Hun

AU - Kim, Soo Hyun

AU - Kim, Hyungjun

N1 - Funding Information: This research was supported by the Converging Research Center Program through the Ministry of Education, Science and Technology ( 2013K000173 ). Also, this work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) ( 2011-0028594 )

PY - 2014/4/1

Y1 - 2014/4/1

N2 - We investigated the device properties of ZnO homojunction core-shell nanorods (NRs) ultraviolet (UV) photo-detecting diodes depending on fabrication process. ZnO homojunction core-shell NRs fabrication was realized by atomic layer deposition (ALD) of highly conformal ZnO shell with high concentration of nitrogen (HNZO) over hydrothermally synthesized n-ZnO NRs. ALD of HNZO was carried out using diethyl zinc (DEZ) and diluted ammonium hydroxide (NH 4OH) as a Zn precursor and reactant/nitrogen source, respectively. On the electrical analysis, HNZO films is found to be weak n-type or ambiguous and, finally this HNZO attributed the rectifying property at the junction with n-type ZnO NRs. ZnO planar device was also fabricated as a comparative reference. Comparative study between core-shell and planar device has shown that the responsivity of the core-shell device was turned out to be about two times higher than that of planar device. Photoluminescence (PL) intensity of core-shell device was significantly reduced compared to that of planar device for overall region of wavelength, which was attributed to rapid separation of photo-generated carriers. The carrier transport mechanism in core-shell NR device is discussed based on band bending phenomenon.

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ZnO homojunction core-shell nanorods ultraviolet photo-detecting diodes prepared by atomic layer deposition

Abstract

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