ZnO-based thin-film transistors of optimal device performance

H. S. Bae; Seongil Im

doi:10.1116/1.1756166

ZnO-based thin-film transistors of optimal device performance

H. S. Bae, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Original language	English
Pages (from-to)	1191-1195
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	22
Issue number	3
DOIs	https://doi.org/10.1116/1.1756166
Publication status	Published - 2004

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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AU - Im, Seongil

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ZnO-based thin-film transistors of optimal device performance

All Science Journal Classification (ASJC) codes

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