X-ray photoelectron spectroscopic study of Ge2 Sb2 Te5 etched by fluorocarbon inductively coupled plasmas

S. K. Kang, J. S. Oh, B. J. Park, S. W. Kim, J. T. Lim, G. Y. Yeom, C. J. Kang, G. J. Min

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20 Citations (Scopus)

Abstract

X-ray photoelectron spectroscopy was used to determine the level of surface fluorination damage of Ge2 Sb2 Te5 (GST) etched by fluorocarbon gases at different F/C ratios. When blank GST was etched, the gas with a higher F/C ratio produced a thinner C-F polymer on the etched surface but fluorinated Ge, Sb, and Te compounds were observed in the remaining GST. When the sidewall of the etched GST features was investigated, a thicker fluorinated layer was observed on the GST sidewall etched by the higher F/C ratio gas, indicating more fluorination due to the difficulty in preventing F diffusion into the GST through the thinner C-F layer.

Original languageEnglish
Article number043126
JournalApplied Physics Letters
Volume93
Issue number4
DOIs
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This study was supported by Samsung Electronics and the National Program for Tera-Level Nanodevices of the Korean Ministry of Education, Science and Technology (MEST) as a Century Frontier Program.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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