X-ray photoelectron spectroscopic analysis on plasma-etched SiO2 aerogel with CHF3 gas

Seok Joo Wang; Il Sup Jin; Hyung Ho Park

doi:10.1016/S0257-8972(97)00588-4

X-ray photoelectron spectroscopic analysis on plasma-etched SiO₂ aerogel with CHF₃ gas

Seok Joo Wang, Il Sup Jin, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

SiO₂ aerogel has great potential as a promising intermetal dielectric with low dielectric constant due to its porous nature. Dry etching of porous SiO₂ should be carefully investigated for its application as an intermetal dielectric. The etching behaviour of SiO₂ aerogel with inductively coupled CHF₃ plasma etching was investigated and compared with thermally grown SiO₂. A basic three-dimensional network structure, composed of SiO₂ particles and internal pores, was maintained on the etching process. From angle-resolved X-ray photoelectron spectroscopy analyses, it was revealed that the etching process occurred not only at the aerogel film surface but also at the large internal surface. However, the effective etch rate was slower, from the consideration of 70% film porosity, compared with thermally grown SiO₂. This is related to the large content of C and H in the SiO₂ aerogel film.

Original language	English
Pages (from-to)	59-64
Number of pages	6
Journal	Surface and Coatings Technology
Volume	100-101
Issue number	1-3
DOIs	https://doi.org/10.1016/S0257-8972(97)00588-4
Publication status	Published - 1998 Mar

Bibliographical note

Funding Information:
This work was supported by the Ministry of Education through the Inter-University Semiconductor Research Center ( ISRC 96-E-1063) in Seoul National University.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

Access to Document

10.1016/S0257-8972(97)00588-4

Cite this

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title = "X-ray photoelectron spectroscopic analysis on plasma-etched SiO2 aerogel with CHF3 gas",

abstract = "SiO2 aerogel has great potential as a promising intermetal dielectric with low dielectric constant due to its porous nature. Dry etching of porous SiO2 should be carefully investigated for its application as an intermetal dielectric. The etching behaviour of SiO2 aerogel with inductively coupled CHF3 plasma etching was investigated and compared with thermally grown SiO2. A basic three-dimensional network structure, composed of SiO2 particles and internal pores, was maintained on the etching process. From angle-resolved X-ray photoelectron spectroscopy analyses, it was revealed that the etching process occurred not only at the aerogel film surface but also at the large internal surface. However, the effective etch rate was slower, from the consideration of 70% film porosity, compared with thermally grown SiO2. This is related to the large content of C and H in the SiO2 aerogel film.",

author = "Wang, {Seok Joo} and Jin, {Il Sup} and Park, {Hyung Ho}",

note = "Funding Information: This work was supported by the Ministry of Education through the Inter-University Semiconductor Research Center ( ISRC 96-E-1063) in Seoul National University.",

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AU - Wang, Seok Joo

AU - Jin, Il Sup

AU - Park, Hyung Ho

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N2 - SiO2 aerogel has great potential as a promising intermetal dielectric with low dielectric constant due to its porous nature. Dry etching of porous SiO2 should be carefully investigated for its application as an intermetal dielectric. The etching behaviour of SiO2 aerogel with inductively coupled CHF3 plasma etching was investigated and compared with thermally grown SiO2. A basic three-dimensional network structure, composed of SiO2 particles and internal pores, was maintained on the etching process. From angle-resolved X-ray photoelectron spectroscopy analyses, it was revealed that the etching process occurred not only at the aerogel film surface but also at the large internal surface. However, the effective etch rate was slower, from the consideration of 70% film porosity, compared with thermally grown SiO2. This is related to the large content of C and H in the SiO2 aerogel film.

AB - SiO2 aerogel has great potential as a promising intermetal dielectric with low dielectric constant due to its porous nature. Dry etching of porous SiO2 should be carefully investigated for its application as an intermetal dielectric. The etching behaviour of SiO2 aerogel with inductively coupled CHF3 plasma etching was investigated and compared with thermally grown SiO2. A basic three-dimensional network structure, composed of SiO2 particles and internal pores, was maintained on the etching process. From angle-resolved X-ray photoelectron spectroscopy analyses, it was revealed that the etching process occurred not only at the aerogel film surface but also at the large internal surface. However, the effective etch rate was slower, from the consideration of 70% film porosity, compared with thermally grown SiO2. This is related to the large content of C and H in the SiO2 aerogel film.

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