Wideband Si micromachined transitions for RF wafer-scale packages

Alexandras Margomenos; Yongshik Lee; Linda P.B. Katehi

doi:10.1109/SMIC.2007.322790

Wideband Si micromachined transitions for RF wafer-scale packages

Alexandras Margomenos, Yongshik Lee, Linda P.B. Katehi

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

Five types of micromachined vertical transitions appropriate for high frequency packaging are presented. The transitions are designed, fabricated and tested for silicon wafers. A "top-via" transition for on-wafer packaging is introduced. This design combines the packaging cavity and the RF transition on a single wafer in order to simplify the integration. This approach offers increased flexibility in the fabrication and encapsulation of on-wafer packaged devices. The remaining transitions are: a microstrip-to-microstrip transition, based on the use of a short finite ground coplanar waveguide (FGC) section for improved impedance matching. In addition, a microstrip-to-FGC, a FGC-to-microstrip, and a FGC-to-FGC transitions are presented.

Original language	English
Title of host publication	2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Pages	183-186
Number of pages	4
DOIs	https://doi.org/10.1109/SMIC.2007.322790
Publication status	Published - 2007
Event	2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 - Long Beach, CA, United States Duration: 2007 Jan 10 → 2007 Jan 12

Publication series

Name	2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Other

Other	2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07
Country/Territory	United States
City	Long Beach, CA
Period	07/1/10 → 07/1/12

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/SMIC.2007.322790

Cite this

@inproceedings{330161d25fcd4d52b804dcbff90bccf0,

title = "Wideband Si micromachined transitions for RF wafer-scale packages",

abstract = "Five types of micromachined vertical transitions appropriate for high frequency packaging are presented. The transitions are designed, fabricated and tested for silicon wafers. A {"}top-via{"} transition for on-wafer packaging is introduced. This design combines the packaging cavity and the RF transition on a single wafer in order to simplify the integration. This approach offers increased flexibility in the fabrication and encapsulation of on-wafer packaged devices. The remaining transitions are: a microstrip-to-microstrip transition, based on the use of a short finite ground coplanar waveguide (FGC) section for improved impedance matching. In addition, a microstrip-to-FGC, a FGC-to-microstrip, and a FGC-to-FGC transitions are presented.",

author = "Alexandras Margomenos and Yongshik Lee and Katehi, {Linda P.B.}",

year = "2007",

doi = "10.1109/SMIC.2007.322790",

language = "English",

isbn = "0780397649",

series = "2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07",

pages = "183--186",

booktitle = "2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07",

note = "2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07 ; Conference date: 10-01-2007 Through 12-01-2007",

}

Margomenos, A, Lee, Y & Katehi, LPB 2007, Wideband Si micromachined transitions for RF wafer-scale packages. in 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07., 4117357, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07, pp. 183-186, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07, Long Beach, CA, United States, 07/1/10. https://doi.org/10.1109/SMIC.2007.322790

Wideband Si micromachined transitions for RF wafer-scale packages. / Margomenos, Alexandras; Lee, Yongshik; Katehi, Linda P.B.
2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07. 2007. p. 183-186 4117357 (2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Wideband Si micromachined transitions for RF wafer-scale packages

AU - Margomenos, Alexandras

AU - Lee, Yongshik

AU - Katehi, Linda P.B.

PY - 2007

Y1 - 2007

N2 - Five types of micromachined vertical transitions appropriate for high frequency packaging are presented. The transitions are designed, fabricated and tested for silicon wafers. A "top-via" transition for on-wafer packaging is introduced. This design combines the packaging cavity and the RF transition on a single wafer in order to simplify the integration. This approach offers increased flexibility in the fabrication and encapsulation of on-wafer packaged devices. The remaining transitions are: a microstrip-to-microstrip transition, based on the use of a short finite ground coplanar waveguide (FGC) section for improved impedance matching. In addition, a microstrip-to-FGC, a FGC-to-microstrip, and a FGC-to-FGC transitions are presented.

AB - Five types of micromachined vertical transitions appropriate for high frequency packaging are presented. The transitions are designed, fabricated and tested for silicon wafers. A "top-via" transition for on-wafer packaging is introduced. This design combines the packaging cavity and the RF transition on a single wafer in order to simplify the integration. This approach offers increased flexibility in the fabrication and encapsulation of on-wafer packaged devices. The remaining transitions are: a microstrip-to-microstrip transition, based on the use of a short finite ground coplanar waveguide (FGC) section for improved impedance matching. In addition, a microstrip-to-FGC, a FGC-to-microstrip, and a FGC-to-FGC transitions are presented.

UR - http://www.scopus.com/inward/record.url?scp=34547329516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34547329516&partnerID=8YFLogxK

U2 - 10.1109/SMIC.2007.322790

DO - 10.1109/SMIC.2007.322790

M3 - Conference contribution

AN - SCOPUS:34547329516

SN - 0780397649

SN - 9780780397644

T3 - 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

SP - 183

EP - 186

BT - 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

T2 - 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF07

Y2 - 10 January 2007 through 12 January 2007

ER -

Wideband Si micromachined transitions for RF wafer-scale packages

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this