Wet oxidation behaviors of polycrystalline [formula omitted] films

S. K. Kang; D. H. ko; K. C. Lee; T. W. Lee; Y. H. Lee; T. H. Ahn; I. S. Yeo; S. H. oh; C. G. Park

doi:10.1116/1.1339022

Wet oxidation behaviors of polycrystalline [formula omitted] films

S. K. Kang, D. H. ko, K. C. Lee, T. W. Lee, Y. H. Lee, T. H. Ahn, I. S. Yeo, S. H. oh, C. G. Park

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We investigated the oxidation behaviors of poly [formula omitted] films with a 15% and 42% Ge content. The films were deposited using ultrahigh vacuum chemical vapor deposition on a 1000 Å thick thermal [formula omitted] layer, and were oxidized using a conventional furnace in wet oxygen ambient at 700 and 800 °C. The physical and chemical properties of the oxide were analyzed by using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy before and after the oxidation. We observed that the Ge content in the oxide layer and oxidation rate increased with the increase of Ge content in poly [formula omitted] films. We also observed that Ge content in the oxide layer decreased with the increase of oxidation temperature.

Original language	English
Pages (from-to)	1617-1622
Number of pages	6
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	19
Issue number	4
DOIs	https://doi.org/10.1116/1.1339022
Publication status	Published - 2001 Jul

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1116/1.1339022

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title = "Wet oxidation behaviors of polycrystalline [formula omitted] films",

abstract = "We investigated the oxidation behaviors of poly [formula omitted] films with a 15% and 42% Ge content. The films were deposited using ultrahigh vacuum chemical vapor deposition on a 1000 {\AA} thick thermal [formula omitted] layer, and were oxidized using a conventional furnace in wet oxygen ambient at 700 and 800 °C. The physical and chemical properties of the oxide were analyzed by using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy before and after the oxidation. We observed that the Ge content in the oxide layer and oxidation rate increased with the increase of Ge content in poly [formula omitted] films. We also observed that Ge content in the oxide layer decreased with the increase of oxidation temperature.",

author = "Kang, {S. K.} and ko, {D. H.} and Lee, {K. C.} and Lee, {T. W.} and Lee, {Y. H.} and Ahn, {T. H.} and Yeo, {I. S.} and oh, {S. H.} and Park, {C. G.}",

year = "2001",

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T1 - Wet oxidation behaviors of polycrystalline [formula omitted] films

AU - Kang, S. K.

AU - ko, D. H.

AU - Lee, K. C.

AU - Lee, T. W.

AU - Lee, Y. H.

AU - Ahn, T. H.

AU - Yeo, I. S.

AU - oh, S. H.

AU - Park, C. G.

PY - 2001/7

Y1 - 2001/7

N2 - We investigated the oxidation behaviors of poly [formula omitted] films with a 15% and 42% Ge content. The films were deposited using ultrahigh vacuum chemical vapor deposition on a 1000 Å thick thermal [formula omitted] layer, and were oxidized using a conventional furnace in wet oxygen ambient at 700 and 800 °C. The physical and chemical properties of the oxide were analyzed by using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy before and after the oxidation. We observed that the Ge content in the oxide layer and oxidation rate increased with the increase of Ge content in poly [formula omitted] films. We also observed that Ge content in the oxide layer decreased with the increase of oxidation temperature.

AB - We investigated the oxidation behaviors of poly [formula omitted] films with a 15% and 42% Ge content. The films were deposited using ultrahigh vacuum chemical vapor deposition on a 1000 Å thick thermal [formula omitted] layer, and were oxidized using a conventional furnace in wet oxygen ambient at 700 and 800 °C. The physical and chemical properties of the oxide were analyzed by using Rutherford backscattering spectrometry, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy before and after the oxidation. We observed that the Ge content in the oxide layer and oxidation rate increased with the increase of Ge content in poly [formula omitted] films. We also observed that Ge content in the oxide layer decreased with the increase of oxidation temperature.

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JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

IS - 4

ER -

Wet oxidation behaviors of polycrystalline [formula omitted] films

Abstract

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