Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

Jae Sang Heo, Jeong Wan Jo, Jingu Kang, Chan Yong Jeong, Hu Young Jeong, Sung Kyu Kim, Kwanpyo Kim, Hyuck In Kwon, Jaekyun Kim, Yong Hoon Kim, Myung Gil Kim, Sung Kyu Park

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51 Citations (Scopus)


The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 109, subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm2 V-1 s-1, and a bias stability of ΔVTH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs.

Original languageEnglish
Pages (from-to)10403-10412
Number of pages10
JournalACS Applied Materials and Interfaces
Issue number16
Publication statusPublished - 2016 Apr 27

Bibliographical note

Funding Information:
This work was supported by the Italian Ministry of Education and University (No. 2017FJSM9S). The funders had no role in study design, data collection and analysis, decision to publish, or preparation of the manuscript.

Publisher Copyright:
© 2016 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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