Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

Jae Sang Heo; Jeong Wan Jo; Jingu Kang; Chan Yong Jeong; Hu Young Jeong; Sung Kyu Kim; Kwanpyo Kim; Hyuck In Kwon; Jaekyun Kim; Yong Hoon Kim; Myung Gil Kim; Sung Kyu Park

doi:10.1021/acsami.5b12819

Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

Jae Sang Heo, Jeong Wan Jo, Jingu Kang, Chan Yong Jeong, Hu Young Jeong, Sung Kyu Kim, Kwanpyo Kim, Hyuck In Kwon, Jaekyun Kim, Yong Hoon Kim, Myung Gil Kim, Sung Kyu Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 10⁹, subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm² V^-1 s^-1, and a bias stability of ΔV_TH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs.

Original language	English
Pages (from-to)	10403-10412
Number of pages	10
Journal	ACS Applied Materials and Interfaces
Volume	8
Issue number	16
DOIs	https://doi.org/10.1021/acsami.5b12819
Publication status	Published - 2016 Apr 27

Bibliographical note

Funding Information:
This work was supported by the Italian Ministry of Education and University (No. 2017FJSM9S). The funders had no role in study design, data collection and analysis, decision to publish, or preparation of the manuscript.

Publisher Copyright:
© 2016 American Chemical Society.

All Science Journal Classification (ASJC) codes

Materials Science(all)

Access to Document

10.1021/acsami.5b12819

Cite this

@article{fff32e374a4e4e8b9489951ca91bb99e,

title = "Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors",

abstract = "The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 109, subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm2 V-1 s-1, and a bias stability of ΔVTH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs.",

author = "Heo, {Jae Sang} and Jo, {Jeong Wan} and Jingu Kang and Jeong, {Chan Yong} and Jeong, {Hu Young} and Kim, {Sung Kyu} and Kwanpyo Kim and Kwon, {Hyuck In} and Jaekyun Kim and Kim, {Yong Hoon} and Kim, {Myung Gil} and Park, {Sung Kyu}",

note = "Funding Information: This work was supported by the Italian Ministry of Education and University (No. 2017FJSM9S). The funders had no role in study design, data collection and analysis, decision to publish, or preparation of the manuscript. Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = apr,

day = "27",

doi = "10.1021/acsami.5b12819",

language = "English",

volume = "8",

pages = "10403--10412",

journal = "ACS applied materials & interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

number = "16",

}

TY - JOUR

T1 - Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

AU - Heo, Jae Sang

AU - Jo, Jeong Wan

AU - Kang, Jingu

AU - Jeong, Chan Yong

AU - Jeong, Hu Young

AU - Kim, Sung Kyu

AU - Kim, Kwanpyo

AU - Kwon, Hyuck In

AU - Kim, Jaekyun

AU - Kim, Yong Hoon

AU - Kim, Myung Gil

AU - Park, Sung Kyu

N1 - Funding Information: This work was supported by the Italian Ministry of Education and University (No. 2017FJSM9S). The funders had no role in study design, data collection and analysis, decision to publish, or preparation of the manuscript. Publisher Copyright: © 2016 American Chemical Society.

PY - 2016/4/27

Y1 - 2016/4/27

N2 - The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 109, subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm2 V-1 s-1, and a bias stability of ΔVTH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs.

AB - The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first DUV-annealed amorphous indium-gallium-zinc-oxide (a-IGZO) thin film is likely to induce the preferred adsorption of water molecules at the oxygen vacancies and leads to subsequent hydroxide formation in the bulk a-IGZO films. Although the water treatment initially degraded the electrical performance of the a-IGZO TFTs, the second DUV irradiation on the water-treated devices may enable a more complete metal-oxygen-metal lattice formation while maintaining low oxygen vacancies in the oxide films. Overall, the stable and dense metal-oxygen-metal (M-O-M) network formation could be easily achieved at low temperatures (below 150 °C). The successful passivation of structural imperfections in the a-IGZO TFTs, such as hydroxyl group (OH-) and oxygen vacancies, mainly results in the enhanced electrical performances of the DWD-processed a-IGZO TFTs (on/off current ratio of 8.65 × 109, subthreshold slope of 0.16 V/decade, an average mobility of >6.94 cm2 V-1 s-1, and a bias stability of ΔVTH < 2.5 V), which show more than a 30% improvement over the simple DUV-treated a-IGZO TFTs.

UR - http://www.scopus.com/inward/record.url?scp=84966356378&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84966356378&partnerID=8YFLogxK

U2 - 10.1021/acsami.5b12819

DO - 10.1021/acsami.5b12819

M3 - Article

AN - SCOPUS:84966356378

SN - 1944-8244

VL - 8

SP - 10403

EP - 10412

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

IS - 16

ER -

Water-Mediated Photochemical Treatments for Low-Temperature Passivation of Metal-Oxide Thin-Film Transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this