Water-Erasable Memory Device for Security Applications Prepared by the Atomic Layer Deposition of GeO2

Chang Mo Yoon, Il Kwon Oh, Yujin Lee, Jeong Gyu Song, Su Jeong Lee, Jae Min Myoung, Hyun Gu Kim, Hyoung Seok Moon, Bonggeun Shong, Han Bo Ram Lee, Hyungjun Kim

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


We have investigated the atomic layer deposition (ALD) of GeO2 thin films that dissolve in water rapidly and have excellent electrical properties for use in memory devices. The growth characteristics based on surface reactions during the ALD process are discussed by correlation with experimental results and atomistic theoretical calculation. Compared to sputtered GeO2 films, the ALD-grown GeO2 is perfect, pure, and water-soluble at room temperature and has better electrical properties for use as the dielectric layer in memory devices. The superior film properties of ALD GeO2 are attributed to the higher film density, high purity, low roughness, and highly stoichiometric film composition. Finally, we demonstrate the fabrication of charge-trapping memory (CTM) devices with ALD GeO2, and that the electrical information stored in the CTM can be eliminated immediately by exposure to one droplet of water at room temperature. Thus, ALD GeO2 could find widespread application in the fabrication of secure memory devices.

Original languageEnglish
Pages (from-to)830-840
Number of pages11
JournalChemistry of Materials
Issue number3
Publication statusPublished - 2018 Feb 13

Bibliographical note

Publisher Copyright:
© 2018 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Chemical Engineering
  • Materials Chemistry


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