Wafer-scale, conformal and direct growth of MoS 2 thin films by atomic layer deposition

Yujin Jang, Seungmin Yeo, Han Bo Ram Lee, Hyungjun Kim, Soo Hyun Kim

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107 Citations (Scopus)


Molybdenum disulfide (MoS 2 ) thin films were grown directly on SiO 2 covered wafers by atomic layer deposition (ALD) at the deposition temperatures ranging from 175 to 225 °C using molybdenum hexacarbonyl [Mo(CO) 6 ] and H 2 S plasma as the precursor and reactant, respectively. Self-limited film growth on the thermally-grown SiO 2 substrate was observed with both the precursor and reactant pulsing time. The growth rate was ∼0.05 nm/cycle and a short incubation cycle of around 13 was observed at a deposition temperature of 175 °C. The MoS 2 films formed nanocrystalline microstructure with a hexagonal crystal system (2H-MoS 2 ), which was confirmed by X-ray diffraction and transmission electron microscopy. Single crystal MoS 2 nanosheets, ∼20 nm in size, were fabricated by controlling the number of ALD cycles. The ALD-MoS 2 thin films exhibited good stoichiometry with negligible C impurities, approximately 0.1 at.% from Rutherford backscattering spectrometry (RBS). X-ray photoelectron spectroscopy confirmed the formation of chemical bonding from MoS 2 . The step coverage of ALD-MoS 2 was approximately 75% at a 100 nm sized trench. Overall, the ALD-MoS 2 process made uniform deposition possible on the wafer-scale (4 in. in diameter).

Original languageEnglish
Pages (from-to)160-165
Number of pages6
JournalApplied Surface Science
Publication statusPublished - 2016 Mar 1

Bibliographical note

Funding Information:
This study ( 2015R1A2A2A04004945 ) was supported by the Mid-career Researcher Program through NRF grant funded by the MEST and also partially supported by the Human Resource Training Program for Regional Innovation and Creativity through the Ministry of Education and NRF, Korea ( NRF-2014H1C1A1066809 ) and Human Resources Program in the Transportation Specialized Lighting Core Technology Development granted financial resource from the Ministry of Trade, Industry and Energy (No. N0001364 ).

Publisher Copyright:
© 2016 Elsevier B.V. All rights reserved.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces


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