Wafer-level transfer of thermo-piezoelectric Si3N4 cantilever array on a CMOS circuit for high density probe-based data storage

Young Sik Kim; Hyo Jin Nam; Seong Soo Jang; Caroline Sunyong Lee; Won Hyeog Jin; Il Joo Cho; Jong Uk Bu; Sun Il Chang; Euisik Yoon

Wafer-level transfer of thermo-piezoelectric Si₃N₄ cantilever array on a CMOS circuit for high density probe-based data storage

Young Sik Kim, Hyo Jin Nam, Seong Soo Jang, Caroline Sunyong Lee, Won Hyeog Jin, Il Joo Cho, Jong Uk Bu, Sun Il Chang, Euisik Yoon

Yonsei Advanced Science Institute

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

In this research, a wafer-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride (Si₃N ₄) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric SisN₄ cantilevers. The thermo-piezoelectric Si₃N₄ cantilever arrays were fabricated with a conventional p-type silicon wafer instead of a SOI wafer. Furthermore, we have developed a wafer-level cantilever transfer process, which requires only one step of cantilever transfer process to integrate the CMOS circuit with the cantilevers. Using this process, we have fabricated a single thermo-piezoelectric Si₃N₄ cantilever, and recorded 65nm data bits on a PMMA film. And we have successfully applied this method to transfer 34×34 thermo-piezoelectric Si₃N₄ cantilever arrays on a CMOS wafer. Finally, We obtained reading signals from one of the cantilevers.

Original language	English
Title of host publication	19th IEEE International Conference on Micro Electro Mechanical Systems
Pages	922-925
Number of pages	4
Publication status	Published - 2006
Event	19th IEEE International Conference on Micro Electro Mechanical Systems - Istanbul, Turkey Duration: 2006 Jan 22 → 2006 Jan 26

Publication series

Name	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
Volume	2006
ISSN (Print)	1084-6999

Other

Other	19th IEEE International Conference on Micro Electro Mechanical Systems
Country/Territory	Turkey
City	Istanbul
Period	06/1/22 → 06/1/26

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanical Engineering
Electrical and Electronic Engineering

Cite this

Kim, Y. S., Nam, H. J., Jang, S. S., Lee, C. S., Jin, W. H., Cho, I. J., Bu, J. U., Chang, S. I., & Yoon, E. (2006). Wafer-level transfer of thermo-piezoelectric Si₃N₄ cantilever array on a CMOS circuit for high density probe-based data storage. In 19th IEEE International Conference on Micro Electro Mechanical Systems (pp. 922-925). Article 1627951 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2006).

Kim, Young Sik ; Nam, Hyo Jin ; Jang, Seong Soo et al. / Wafer-level transfer of thermo-piezoelectric Si₃N₄ cantilever array on a CMOS circuit for high density probe-based data storage. 19th IEEE International Conference on Micro Electro Mechanical Systems. 2006. pp. 922-925 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).

@inproceedings{971c4a12c9b1478fad5863e8c85632c1,

title = "Wafer-level transfer of thermo-piezoelectric Si3N4 cantilever array on a CMOS circuit for high density probe-based data storage",

abstract = "In this research, a wafer-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride (Si3N 4) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric SisN4 cantilevers. The thermo-piezoelectric Si3N4 cantilever arrays were fabricated with a conventional p-type silicon wafer instead of a SOI wafer. Furthermore, we have developed a wafer-level cantilever transfer process, which requires only one step of cantilever transfer process to integrate the CMOS circuit with the cantilevers. Using this process, we have fabricated a single thermo-piezoelectric Si3N4 cantilever, and recorded 65nm data bits on a PMMA film. And we have successfully applied this method to transfer 34×34 thermo-piezoelectric Si3N4 cantilever arrays on a CMOS wafer. Finally, We obtained reading signals from one of the cantilevers.",

author = "Kim, {Young Sik} and Nam, {Hyo Jin} and Jang, {Seong Soo} and Lee, {Caroline Sunyong} and Jin, {Won Hyeog} and Cho, {Il Joo} and Bu, {Jong Uk} and Chang, {Sun Il} and Euisik Yoon",

year = "2006",

language = "English",

isbn = "0780394755",

series = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

pages = "922--925",

booktitle = "19th IEEE International Conference on Micro Electro Mechanical Systems",

note = "19th IEEE International Conference on Micro Electro Mechanical Systems ; Conference date: 22-01-2006 Through 26-01-2006",

}

Kim, YS, Nam, HJ, Jang, SS, Lee, CS, Jin, WH, Cho, IJ, Bu, JU, Chang, SI & Yoon, E 2006, Wafer-level transfer of thermo-piezoelectric Si₃N₄ cantilever array on a CMOS circuit for high density probe-based data storage. in 19th IEEE International Conference on Micro Electro Mechanical Systems., 1627951, Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS), vol. 2006, pp. 922-925, 19th IEEE International Conference on Micro Electro Mechanical Systems, Istanbul, Turkey, 06/1/22.

Wafer-level transfer of thermo-piezoelectric Si₃N₄ cantilever array on a CMOS circuit for high density probe-based data storage. / Kim, Young Sik; Nam, Hyo Jin; Jang, Seong Soo et al.
19th IEEE International Conference on Micro Electro Mechanical Systems. 2006. p. 922-925 1627951 (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS); Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Wafer-level transfer of thermo-piezoelectric Si3N4 cantilever array on a CMOS circuit for high density probe-based data storage

AU - Kim, Young Sik

AU - Nam, Hyo Jin

AU - Jang, Seong Soo

AU - Lee, Caroline Sunyong

AU - Jin, Won Hyeog

AU - Cho, Il Joo

AU - Bu, Jong Uk

AU - Chang, Sun Il

AU - Yoon, Euisik

PY - 2006

Y1 - 2006

N2 - In this research, a wafer-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride (Si3N 4) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric SisN4 cantilevers. The thermo-piezoelectric Si3N4 cantilever arrays were fabricated with a conventional p-type silicon wafer instead of a SOI wafer. Furthermore, we have developed a wafer-level cantilever transfer process, which requires only one step of cantilever transfer process to integrate the CMOS circuit with the cantilevers. Using this process, we have fabricated a single thermo-piezoelectric Si3N4 cantilever, and recorded 65nm data bits on a PMMA film. And we have successfully applied this method to transfer 34×34 thermo-piezoelectric Si3N4 cantilever arrays on a CMOS wafer. Finally, We obtained reading signals from one of the cantilevers.

AB - In this research, a wafer-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride (Si3N 4) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric SisN4 cantilevers. The thermo-piezoelectric Si3N4 cantilever arrays were fabricated with a conventional p-type silicon wafer instead of a SOI wafer. Furthermore, we have developed a wafer-level cantilever transfer process, which requires only one step of cantilever transfer process to integrate the CMOS circuit with the cantilevers. Using this process, we have fabricated a single thermo-piezoelectric Si3N4 cantilever, and recorded 65nm data bits on a PMMA film. And we have successfully applied this method to transfer 34×34 thermo-piezoelectric Si3N4 cantilever arrays on a CMOS wafer. Finally, We obtained reading signals from one of the cantilevers.

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M3 - Conference contribution

AN - SCOPUS:33750129329

SN - 0780394755

SN - 9780780394759

T3 - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

SP - 922

EP - 925

BT - 19th IEEE International Conference on Micro Electro Mechanical Systems

T2 - 19th IEEE International Conference on Micro Electro Mechanical Systems

Y2 - 22 January 2006 through 26 January 2006

ER -

Kim YS, Nam HJ, Jang SS, Lee CS, Jin WH, Cho IJ et al. Wafer-level transfer of thermo-piezoelectric Si₃N₄ cantilever array on a CMOS circuit for high density probe-based data storage. In 19th IEEE International Conference on Micro Electro Mechanical Systems. 2006. p. 922-925. 1627951. (Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)).