Wafer-level detection of organic contamination by ZnO-rGO hybrid-assisted laser desorption/ionization time-of-flight mass spectrometry

A technique for wafer-level detection of organic contaminations via surface-assisted laser desorption/ionization time-of-flight mass spectrometry was developed. To replace the organic matrix in matrix-assisted laser desorption/ionization time-of-flight mass spectrometry, zinc oxide-reduced graphene oxide (ZnO-rGO) hybrid was prepared by a hydrothermal reaction and used as the matrix in the detection of benzo[a]pyrene (B[a]P). By varying the rGO content and the amount of hybrid, the optimal rGO content in the hybrid for the detection of B[a]P was determined to be 4 wt% and the optimal amount of hybrid was 20 ng. The limit of detection of this method was found to be 1.6 × 10¹⁴ C atoms cm⁻², which is lower than the concentration of residual organic contamination at which serious failure occurs during semiconductor fabrication. This method was also successfully used to detect other aromatic and aliphatic species on a semiconductor wafer. This approach is fast, accurate, simple, and inexpensive compared to other conventional methods, and can be used to identify localized micro-contamination in the semiconductor industry.