Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO3

Min Kyu Yang; Kyooho Jung; Yongmin Kim; Tae Kuk Ko; Hyunsik Im; Jae Wan Park; Jeon Kook Lee

doi:10.1143/JJAP.49.111101

Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO₃

Min Kyu Yang, Kyooho Jung, Yongmin Kim, Tae Kuk Ko, Hyunsik Im, Jae Wan Park, Jeon Kook Lee

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO ₃/SrRuO₃ device has been investigated using pulse voltage. The required switching time between the high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width. The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS →HRS and HRS →LRS switching minimum switching times of ∼500 and ∼100 ns are required respectively, at a pulse height above the dc switching voltage. The authors attribute the distinction in the switching time to different switching mechanisms.

Original language	English
Article number	111101
Journal	Japanese journal of applied physics
Volume	49
Issue number	11
DOIs	https://doi.org/10.1143/JJAP.49.111101
Publication status	Published - 2010 Nov

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.49.111101

Cite this

@article{d35019aaebe04fe79ce283b1bd7ce6b5,

title = "Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO3",

abstract = "The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO 3/SrRuO3 device has been investigated using pulse voltage. The required switching time between the high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width. The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS →HRS and HRS →LRS switching minimum switching times of ∼500 and ∼100 ns are required respectively, at a pulse height above the dc switching voltage. The authors attribute the distinction in the switching time to different switching mechanisms.",

author = "Yang, {Min Kyu} and Kyooho Jung and Yongmin Kim and Ko, {Tae Kuk} and Hyunsik Im and Park, {Jae Wan} and Lee, {Jeon Kook}",

year = "2010",

month = nov,

doi = "10.1143/JJAP.49.111101",

language = "English",

volume = "49",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "11",

}

TY - JOUR

T1 - Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO3

AU - Yang, Min Kyu

AU - Jung, Kyooho

AU - Kim, Yongmin

AU - Ko, Tae Kuk

AU - Im, Hyunsik

AU - Park, Jae Wan

AU - Lee, Jeon Kook

PY - 2010/11

Y1 - 2010/11

N2 - The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO 3/SrRuO3 device has been investigated using pulse voltage. The required switching time between the high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width. The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS →HRS and HRS →LRS switching minimum switching times of ∼500 and ∼100 ns are required respectively, at a pulse height above the dc switching voltage. The authors attribute the distinction in the switching time to different switching mechanisms.

AB - The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO 3/SrRuO3 device has been investigated using pulse voltage. The required switching time between the high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width. The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS →HRS and HRS →LRS switching minimum switching times of ∼500 and ∼100 ns are required respectively, at a pulse height above the dc switching voltage. The authors attribute the distinction in the switching time to different switching mechanisms.

UR - http://www.scopus.com/inward/record.url?scp=79551626648&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79551626648&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.111101

DO - 10.1143/JJAP.49.111101

M3 - Article

AN - SCOPUS:79551626648

SN - 0021-4922

VL - 49

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11

M1 - 111101

ER -

Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO₃

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this