Voltage-pulse induced resistance switching characteristics in a Cr-doped SrZrO3

Min Kyu Yang, Kyooho Jung, Yongmin Kim, Tae Kuk Ko, Hyunsik Im, Jae Wan Park, Jeon Kook Lee

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


The time resolved bipolar resistance switching in a Pt/Cr-doped SrZrO 3/SrRuO3 device has been investigated using pulse voltage. The required switching time between the high and low resistance states (HRS and LRS) is studied as a function of the pulse height and width. The resistance switching is found to be less dependent on the pulse height in the short pulse region. For LRS →HRS and HRS →LRS switching minimum switching times of ∼500 and ∼100 ns are required respectively, at a pulse height above the dc switching voltage. The authors attribute the distinction in the switching time to different switching mechanisms.

Original languageEnglish
Article number111101
JournalJapanese journal of applied physics
Issue number11
Publication statusPublished - 2010 Nov

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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