Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.
Bibliographical noteFunding Information:
This work was supported in part by Korea Research Foundation made in the program year of 1998 and in part by grand (No. 1999-2-114-004-5) from the interdisciplonary research grogram of the Korea Science and Engineering Foundation (KOSEF).
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics