Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers

K. H. Chae, J. H. Son, G. S. Chang, H. B. Kim, J. Y. Jeong, S. Im, J. H. Song, K. J. Kim, H. K. Kim, C. N. Whang

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12 Citations (Scopus)


Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.

Original languageEnglish
Pages (from-to)1239-1243
Number of pages5
JournalNanostructured Materials
Issue number8
Publication statusPublished - 1999 Nov

Bibliographical note

Funding Information:
This work was supported in part by Korea Research Foundation made in the program year of 1998 and in part by grand (No. 1999-2-114-004-5) from the interdisciplonary research grogram of the Korea Science and Engineering Foundation (KOSEF).

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics


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