Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers

K. H. Chae; J. H. Son; G. S. Chang; H. B. Kim; J. Y. Jeong; S. Im; J. H. Song; K. J. Kim; H. K. Kim; C. N. Whang

doi:10.1016/S0965-9773(99)00414-6

Visible photoluminescence in ion beam mixed SiO₂/Si/SiO₂ layers

K. H. Chae, J. H. Son, G. S. Chang, H. B. Kim, J. Y. Jeong, S. Im, J. H. Song, K. J. Kim, H. K. Kim, C. N. Whang

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Visible photoluminescence from silicon nanocrystals embedded in SiO₂ matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO₂/Si/SiO₂ films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO₂ matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.

Original language	English
Pages (from-to)	1239-1243
Number of pages	5
Journal	Nanostructured Materials
Volume	11
Issue number	8
DOIs	https://doi.org/10.1016/S0965-9773(99)00414-6
Publication status	Published - 1999 Nov

Bibliographical note

Funding Information:
This work was supported in part by Korea Research Foundation made in the program year of 1998 and in part by grand (No. 1999-2-114-004-5) from the interdisciplonary research grogram of the Korea Science and Engineering Foundation (KOSEF).

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics

Access to Document

10.1016/S0965-9773(99)00414-6

Cite this

@article{73a2c08f39c64a21988558fab660b1bb,

title = "Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers",

abstract = "Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.",

author = "Chae, {K. H.} and Son, {J. H.} and Chang, {G. S.} and Kim, {H. B.} and Jeong, {J. Y.} and S. Im and Song, {J. H.} and Kim, {K. J.} and Kim, {H. K.} and Whang, {C. N.}",

note = "Funding Information: This work was supported in part by Korea Research Foundation made in the program year of 1998 and in part by grand (No. 1999-2-114-004-5) from the interdisciplonary research grogram of the Korea Science and Engineering Foundation (KOSEF).",

year = "1999",

month = nov,

doi = "10.1016/S0965-9773(99)00414-6",

language = "English",

volume = "11",

pages = "1239--1243",

journal = "Nanostructured Materials",

issn = "0965-9773",

publisher = "Pergamon Press Ltd.",

number = "8",

}

TY - JOUR

T1 - Visible photoluminescence in ion beam mixed SiO2/Si/SiO2 layers

AU - Chae, K. H.

AU - Son, J. H.

AU - Chang, G. S.

AU - Kim, H. B.

AU - Jeong, J. Y.

AU - Im, S.

AU - Song, J. H.

AU - Kim, K. J.

AU - Kim, H. K.

AU - Whang, C. N.

N1 - Funding Information: This work was supported in part by Korea Research Foundation made in the program year of 1998 and in part by grand (No. 1999-2-114-004-5) from the interdisciplonary research grogram of the Korea Science and Engineering Foundation (KOSEF).

PY - 1999/11

Y1 - 1999/11

N2 - Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.

AB - Visible photoluminescence from silicon nanocrystals embedded in SiO2 matrix by ion beam mixing was investigated. Photoluminescence spectra of ion beam mixed SiO2/Si/SiO2 films excited by an Ar-laser (457.9 nm) showed more intense luminescence with a peak centered at 720 nm than that prepared by the conventional ion implantation method. The formation of nanocrystals in SiO2 matrix was confirmed by cross-sectional high resolution transmission electron microscopy. The red luminescence is attributed to the silicon nanocrystals produced by ion beam mixing.

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DO - 10.1016/S0965-9773(99)00414-6

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JO - Nanostructured Materials

JF - Nanostructured Materials

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