Visible photoluminescence from Si ion-beam-mixed SiO 2/Si/SiO2 layers deposited by e-beam evaporation

J. H. Son; H. B. Kim; C. N. Whang; M. C. Sung; K. Jeong; S. Im; K. H. Chae

doi:10.1016/j.nimb.2003.11.059

Visible photoluminescence from Si ion-beam-mixed SiO ₂/Si/SiO₂ layers deposited by e-beam evaporation

J. H. Son, H. B. Kim, C. N. Whang, M. C. Sung, K. Jeong, S. Im, K. H. Chae

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

The SiO₂/Si (3 nm)/SiO₂ layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5×10 ¹⁶ ions/cm² of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO ₂/Si (3 nm)/SiO₂ layer will be discussed.

Original language	English
Pages (from-to)	346-349
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	216
Issue number	1-4
DOIs	https://doi.org/10.1016/j.nimb.2003.11.059
Publication status	Published - 2004 Feb
Event	Proceedings of the E-MRS 2003 Symposium E on Ion Beams - Strasbourg, France Duration: 2003 Jun 10 → 2003 Jun 13

Bibliographical note

Funding Information:
This work was supported by KOSEF through the Atomic-scale Surface Science Research Center at Yonsei University.

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

Access to Document

10.1016/j.nimb.2003.11.059

Cite this

@article{2fcb664682b746b0a01df5ec8997e881,

title = "Visible photoluminescence from Si ion-beam-mixed SiO 2/Si/SiO2 layers deposited by e-beam evaporation",

abstract = "The SiO2/Si (3 nm)/SiO2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5×10 16 ions/cm2 of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO 2/Si (3 nm)/SiO2 layer will be discussed.",

keywords = "Annealing, Ion-beam-mixing, Photoluminescence, Si nanocrystal",

author = "Son, {J. H.} and Kim, {H. B.} and Whang, {C. N.} and Sung, {M. C.} and K. Jeong and S. Im and Chae, {K. H.}",

note = "Funding Information: This work was supported by KOSEF through the Atomic-scale Surface Science Research Center at Yonsei University.; Proceedings of the E-MRS 2003 Symposium E on Ion Beams ; Conference date: 10-06-2003 Through 13-06-2003",

year = "2004",

month = feb,

doi = "10.1016/j.nimb.2003.11.059",

language = "English",

volume = "216",

pages = "346--349",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier B.V.",

number = "1-4",

}

Visible photoluminescence from Si ion-beam-mixed SiO ₂/Si/SiO₂ layers deposited by e-beam evaporation. / Son, J. H.; Kim, H. B.; Whang, C. N. et al.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 216, No. 1-4, 02.2004, p. 346-349.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Visible photoluminescence from Si ion-beam-mixed SiO 2/Si/SiO2 layers deposited by e-beam evaporation

AU - Son, J. H.

AU - Kim, H. B.

AU - Whang, C. N.

AU - Sung, M. C.

AU - Jeong, K.

AU - Im, S.

AU - Chae, K. H.

N1 - Funding Information: This work was supported by KOSEF through the Atomic-scale Surface Science Research Center at Yonsei University.

PY - 2004/2

Y1 - 2004/2

N2 - The SiO2/Si (3 nm)/SiO2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5×10 16 ions/cm2 of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO 2/Si (3 nm)/SiO2 layer will be discussed.

AB - The SiO2/Si (3 nm)/SiO2 layers were deposited by e-beam evaporation, and ion-beam-mixing was performed with 1.5×10 16 ions/cm2 of 55 keV at room temperature. The sample deposited by e-beam evaporation needs the pre-annealing before ion-beam-mixing as well as the post-annealing after ion-beam-mixing to obtain the nanocrystal-related photoluminescence, compared with the study of the sample deposited by ion beam sputtering which was not required the pre-annealing before ion-beam-mixing to obtain visible red photoluminescence. The pre-annealing effect on the photoluminescence of Si ion-beam-mixed SiO 2/Si (3 nm)/SiO2 layer will be discussed.

KW - Annealing

KW - Ion-beam-mixing

KW - Photoluminescence

KW - Si nanocrystal

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M3 - Conference article

AN - SCOPUS:1042277323

SN - 0168-583X

VL - 216

SP - 346

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

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T2 - Proceedings of the E-MRS 2003 Symposium E on Ion Beams

Y2 - 10 June 2003 through 13 June 2003

ER -