Violet Light-Emitting Diodes Based on p-CuI Thin Film/n-MgZnO Quantum Dot Heterojunction

Sung Doo Baek, Do Kyun Kwon, Yun Cheol Kim, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)


As the lighting technology evolves, the need for violet light-emitting diodes (LEDs) is growing for high color rendering index lighting. The present technology for violet LEDs is based on the high-cost GaN materials and metal-organic chemical vapor deposition process; therefore, there have recently been intensive studies on developing low-cost alternative materials and processes. In this study, for the first time, we demonstrated violet LEDs based on low-cost materials and processes using a p-CuI thin film/n-MgZnO quantum dot (QD) heterojunction. The p-CuI thin film layer was prepared by an iodination process of Cu films, and the n-MgZnO layer was deposited by spin-coating presynthesized n-MgZnO QDs. To maximize the performance of the violet LED, an optimizing process was performed for each layer of p- and n-type materials. The optimized LED with 1 × 1 mm2-area pixel fabricated using the p-CuI thin film at the iodination temperature of 15 °C and the n-MgZnO QDs at the Mg alloying concentration of 2.7 at. % exhibited the strongest violet emissions at 6 V.

Original languageEnglish
Pages (from-to)6037-6047
Number of pages11
JournalACS Applied Materials and Interfaces
Issue number5
Publication statusPublished - 2020 Feb 5

Bibliographical note

Publisher Copyright:
Copyright © 2020 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • General Materials Science


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