TY - JOUR
T1 - Vertical liquid crystal orientation on amorphous tantalum pentoxide surfaces depending on anisotropic dipole-dipole interaction via ion beam irradiation
AU - Lee, Jong Jin
AU - Kim, Hyung Jun
AU - Kang, Young Gu
AU - Kim, Young Hwan
AU - Park, Hong Gyu
AU - Kim, Byoung Yong
AU - Seo, Dae Shik
PY - 2011/3
Y1 - 2011/3
N2 - We achieved vertically aligned (VA) liquid crystals (LCs) on amorphous tantalum pentoxide (Ta2O5) alignment films deposited by radio frequency (rf) magnetron sputtering using ion beam (IB) irradiation. By analyzing measurements by X-ray photoelectron spectroscopy (XPS), we confirmed the bond breaking, as detected from the O 1s spectra, which caused an isotropic dipole-dipole interaction between the LC molecules and the Ta2O5 alignment film to uniformly align the vertical LC molecular orientation as a function of IB energy density. Moreover, by examining the electro-optical (EO) characteristics of the Ta2O5 surfaces compared with those of the polyimide (PI) alignment layer, we confirmed that Ta2O5 has a low threshold voltage and a low power consumption when used as an LC alignment layer.
AB - We achieved vertically aligned (VA) liquid crystals (LCs) on amorphous tantalum pentoxide (Ta2O5) alignment films deposited by radio frequency (rf) magnetron sputtering using ion beam (IB) irradiation. By analyzing measurements by X-ray photoelectron spectroscopy (XPS), we confirmed the bond breaking, as detected from the O 1s spectra, which caused an isotropic dipole-dipole interaction between the LC molecules and the Ta2O5 alignment film to uniformly align the vertical LC molecular orientation as a function of IB energy density. Moreover, by examining the electro-optical (EO) characteristics of the Ta2O5 surfaces compared with those of the polyimide (PI) alignment layer, we confirmed that Ta2O5 has a low threshold voltage and a low power consumption when used as an LC alignment layer.
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U2 - 10.1143/JJAP.50.031701
DO - 10.1143/JJAP.50.031701
M3 - Article
AN - SCOPUS:79953091584
SN - 0021-4922
VL - 50
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 3
M1 - 031701
ER -