Various approaches for high performance and stable oxide thin-film transistors

Yeong Gyu Kim; Jae Won Na; Won Gi Kim; Hyun Jae Kim

doi:10.1109/AM-FPD.2015.7173187

Various approaches for high performance and stable oxide thin-film transistors

Yeong Gyu Kim, Jae Won Na, Won Gi Kim, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated various approaches to enhance the electrical performance and stability of oxide thin-film transistors (TFTs) fabricated with vacuum- and solution-process: vertically graded oxygen vacancy active layer (VGA) by control of oxygen partial pressure, sequential pressure annealing (SPA), and hydrogen peroxide activation (HPA) using ultraviolet irradiation. By adopting these techniques, we could effectively control the defect densities in active layer which resulted in high performance and stable oxide TFTs.

Original language	English
Title of host publication	Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	25-28
Number of pages	4
ISBN (Electronic)	9784863484771
DOIs	https://doi.org/10.1109/AM-FPD.2015.7173187
Publication status	Published - 2015 Jul 30
Event	22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015 - Kyoto, Japan Duration: 2015 Jul 1 → 2015 Jul 4

Publication series

Name	Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Other

Other	22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015
Country/Territory	Japan
City	Kyoto
Period	15/7/1 → 15/7/4

Bibliographical note

Publisher Copyright:
© 2015 JSAP.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/AM-FPD.2015.7173187

Cite this

Kim, Y. G., Na, J. W., Kim, W. G., & Kim, H. J. (2015). Various approaches for high performance and stable oxide thin-film transistors. In Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials (pp. 25-28). Article 7173187 (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/AM-FPD.2015.7173187

Kim, Yeong Gyu ; Na, Jae Won ; Kim, Won Gi et al. / Various approaches for high performance and stable oxide thin-film transistors. Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 25-28 (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

@inproceedings{979a0576862b467296d17ed9070b30e9,

title = "Various approaches for high performance and stable oxide thin-film transistors",

abstract = "We investigated various approaches to enhance the electrical performance and stability of oxide thin-film transistors (TFTs) fabricated with vacuum- and solution-process: vertically graded oxygen vacancy active layer (VGA) by control of oxygen partial pressure, sequential pressure annealing (SPA), and hydrogen peroxide activation (HPA) using ultraviolet irradiation. By adopting these techniques, we could effectively control the defect densities in active layer which resulted in high performance and stable oxide TFTs.",

author = "Kim, {Yeong Gyu} and Na, {Jae Won} and Kim, {Won Gi} and Kim, {Hyun Jae}",

note = "Publisher Copyright: {\textcopyright} 2015 JSAP.; 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015 ; Conference date: 01-07-2015 Through 04-07-2015",

year = "2015",

month = jul,

day = "30",

doi = "10.1109/AM-FPD.2015.7173187",

language = "English",

series = "Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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booktitle = "Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices",

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Kim, YG, Na, JW, Kim, WG & Kim, HJ 2015, Various approaches for high performance and stable oxide thin-film transistors. in Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials., 7173187, Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Institute of Electrical and Electronics Engineers Inc., pp. 25-28, 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2015, Kyoto, Japan, 15/7/1. https://doi.org/10.1109/AM-FPD.2015.7173187

Various approaches for high performance and stable oxide thin-film transistors. / Kim, Yeong Gyu; Na, Jae Won; Kim, Won Gi et al.
Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc., 2015. p. 25-28 7173187 (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - We investigated various approaches to enhance the electrical performance and stability of oxide thin-film transistors (TFTs) fabricated with vacuum- and solution-process: vertically graded oxygen vacancy active layer (VGA) by control of oxygen partial pressure, sequential pressure annealing (SPA), and hydrogen peroxide activation (HPA) using ultraviolet irradiation. By adopting these techniques, we could effectively control the defect densities in active layer which resulted in high performance and stable oxide TFTs.

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Kim YG, Na JW, Kim WG, Kim HJ. Various approaches for high performance and stable oxide thin-film transistors. In Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials. Institute of Electrical and Electronics Engineers Inc. 2015. p. 25-28. 7173187. (Proceedings of AM-FPD 2015 - 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials). doi: 10.1109/AM-FPD.2015.7173187

Various approaches for high performance and stable oxide thin-film transistors

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