In this paper, the AC circuit model of multi-finger MOSFET for RF application is investigated. Test structures varying with the gate width and the number of fingers are fabricated in 0.35-μm TSMC process. The s-parameters of test structures are measured from 50MHz to 10GHz. The equivalent circuit model is proposed by hybrids of BSIM3 and the parasitic components. The parasitic components are extracted by optimizing the parameters using the measured DC and RF characteristics. Based on the extracted circuit models, the extracted parameters are verified by the analysis of variance.
|Proceedings of the IEEE/CPMT International Electronics Manufacturing Technology (IEMT) Symposium
|Published - 2008
|2008 33rd IEEE/CPMT International Electronics Manufacturing Technology Conference, IEMT 2008 - Penang, Malaysia
Duration: 2008 Nov 4 → 2008 Nov 6
All Science Journal Classification (ASJC) codes
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering