Van der Waals force contribution to the vertical alignment of liquid crystal on Al2O3 films using ion-beam method

Hong Gyu Park; Young Hwan Kim; Byoung Yong Kim; Dai Hyun Kim; Hong Il Yoon; Dae Shik Seo

doi:10.1016/j.tsf.2011.03.017

Van der Waals force contribution to the vertical alignment of liquid crystal on Al₂O₃ films using ion-beam method

Hong Gyu Park, Young Hwan Kim, Byoung Yong Kim, Dai Hyun Kim, Hong Il Yoon, Dae Shik Seo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

This study demonstrates liquid crystal (LC) alignment on Al ₂O₃ films using the ion-beam (IB) method as well as the optimization of the IB irradiation condition. Uniform LC alignment was achieved at an IB incident energy of 1800 eV with an IB incident angle of 45°, while inferior LC alignments were observed in other tested conditions. The pretilt angles and transmittances of the LC cell were also shown as part of the same trend for the LC alignment states. This result was subject to van der Waals forces which were caused by topographical changes during the IB process.

Original language	English
Pages (from-to)	5654-5657
Number of pages	4
Journal	Thin Solid Films
Volume	519
Issue number	16
DOIs	https://doi.org/10.1016/j.tsf.2011.03.017
Publication status	Published - 2011 Jun 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.03.017

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title = "Van der Waals force contribution to the vertical alignment of liquid crystal on Al2O3 films using ion-beam method",

abstract = "This study demonstrates liquid crystal (LC) alignment on Al 2O3 films using the ion-beam (IB) method as well as the optimization of the IB irradiation condition. Uniform LC alignment was achieved at an IB incident energy of 1800 eV with an IB incident angle of 45°, while inferior LC alignments were observed in other tested conditions. The pretilt angles and transmittances of the LC cell were also shown as part of the same trend for the LC alignment states. This result was subject to van der Waals forces which were caused by topographical changes during the IB process.",

keywords = "Alignment, Aluminum oxide, I, Ion beam, Liquid Crystal, Van der Waals force",

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T1 - Van der Waals force contribution to the vertical alignment of liquid crystal on Al2O3 films using ion-beam method

AU - Park, Hong Gyu

AU - Kim, Young Hwan

AU - Kim, Byoung Yong

AU - Kim, Dai Hyun

AU - Yoon, Hong Il

AU - Seo, Dae Shik

PY - 2011/6/1

Y1 - 2011/6/1

N2 - This study demonstrates liquid crystal (LC) alignment on Al 2O3 films using the ion-beam (IB) method as well as the optimization of the IB irradiation condition. Uniform LC alignment was achieved at an IB incident energy of 1800 eV with an IB incident angle of 45°, while inferior LC alignments were observed in other tested conditions. The pretilt angles and transmittances of the LC cell were also shown as part of the same trend for the LC alignment states. This result was subject to van der Waals forces which were caused by topographical changes during the IB process.

AB - This study demonstrates liquid crystal (LC) alignment on Al 2O3 films using the ion-beam (IB) method as well as the optimization of the IB irradiation condition. Uniform LC alignment was achieved at an IB incident energy of 1800 eV with an IB incident angle of 45°, while inferior LC alignments were observed in other tested conditions. The pretilt angles and transmittances of the LC cell were also shown as part of the same trend for the LC alignment states. This result was subject to van der Waals forces which were caused by topographical changes during the IB process.

KW - Alignment

KW - Aluminum oxide

KW - I

KW - Ion beam

KW - Liquid Crystal

KW - Van der Waals force

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Van der Waals force contribution to the vertical alignment of liquid crystal on Al₂O₃ films using ion-beam method

Abstract

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