Vacuum-free solution-based metallization (VSM) of a-IGZO using trimethylaluminium solution

Taehoon Sung, Min Kyu Song, Se Yeon Jung, Sein Lee, Young Woong Song, Solah Park, Jang Yeon Kwon

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


This research demonstrates a method to reduce the resistance of amorphous indium-gallium-zinc-oxide (a-IGZO) using a "vacuum-free solution-based metallization"(VSM) process, which revolutionizes the metallization process thanks to its simplicity, by simply dipping the a-IGZO into trimethyl aluminium (TMA, (CH3)3Al) solution. From the XPS results, it was found that oxygen vacancies were generated after the VSM process, resulting in the enhanced conductivity. Various metallization time and solution temperature conditions were investigated, and the measured conductivity of the a-IGZO could be enhanced up to 20.32 S cm-1, which is over 105 times larger compared to that of the untreated a-IGZO. By utilizing the VSM process, self-aligned top-gate (SATG) a-IGZO thin-film-transistors (TFTs) were successfully fabricated, and to provide an explanation for the mechanism, X-ray photoelectron spectroscopy (XPS) was employed.

Original languageEnglish
Pages (from-to)3518-3523
Number of pages6
JournalRSC Advances
Issue number6
Publication statusPublished - 2022 Jan 27

Bibliographical note

Publisher Copyright:
© The Royal Society of Chemistry.

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Chemical Engineering


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