Uv-cured reactive mesogen-YInZnO hybrid materials as semiconducting channels in thin-film transistors using a solution-process

Electrical performance of thin-film transistors (TFTs) is important for their applications. Solution-processed TFTs have low mobility and high sub-threshold swings (S.Ss) because there are many pores and pin-holes in the films. These characteristics are attributed to electron trapping in the YInZnO (YIZO) channel, the SiO₂ gate insulator, or their interface. We fabricated hybrid YIZO TFTs with and without UV radiation, and observed that UV-curing of the film affected TFT performance through promoting a response to reactive mesogen (RM). The UV irradiated TFT showed better performance because of the alignment of the channel materials in the source-drain direction.