Use of spin-on-hard mask materials for nano scale patterning technology

Wen Hao Wu; Edward Y. Chang; Hwan Sung Cheon; Sang Kyun Kim; Hyeon Mo Cho; Kyong Ho Yoon; Jong Seob Kim; Tuwon Chang; Seongho Shin

doi:10.1117/12.804695

Use of spin-on-hard mask materials for nano scale patterning technology

Wen Hao Wu, Edward Y. Chang, Hwan Sung Cheon, Sang Kyun Kim, Hyeon Mo Cho, Kyong Ho Yoon, Jong Seob Kim, Tuwon Chang, Seongho Shin

University College

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

Amorphous Carbon Layer (ACL) and SiON system has been proven to be a good hardmask combination. These layers are formed by a high cost, low throughput CVD process. This paper discloses a reliable, low cost, high throughput process using a simple spin on layer structure. Through manipulation of various parameters, additional BARC layer is eliminated and the process is further simplified to a tri-layer structure. Also, PR/SiON/C-SOH (Carbon-Spin-On- Hardmask) system has been compared to PR / Si-SOH (Si-Spin-On-Hardmask) / C-SOH system and found their performances are comparable. This indicates the PR / Si-SOH / C-SOH process is an economical yet comparable substitute.

Original language	English
Article number	71402Q
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	7140
DOIs	https://doi.org/10.1117/12.804695
Publication status	Published - 2008
Event	Lithography Asia 2008 - Taipei, Taiwan, Province of China Duration: 2008 Nov 4 → 2008 Nov 6

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.804695

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title = "Use of spin-on-hard mask materials for nano scale patterning technology",

abstract = "Amorphous Carbon Layer (ACL) and SiON system has been proven to be a good hardmask combination. These layers are formed by a high cost, low throughput CVD process. This paper discloses a reliable, low cost, high throughput process using a simple spin on layer structure. Through manipulation of various parameters, additional BARC layer is eliminated and the process is further simplified to a tri-layer structure. Also, PR/SiON/C-SOH (Carbon-Spin-On- Hardmask) system has been compared to PR / Si-SOH (Si-Spin-On-Hardmask) / C-SOH system and found their performances are comparable. This indicates the PR / Si-SOH / C-SOH process is an economical yet comparable substitute.",

keywords = "Amorphous carbon layer (ACL), Etch selectivity, Spin-on organic hardmask, Tri-layer resist process (TLR)",

author = "Wu, {Wen Hao} and Chang, {Edward Y.} and Cheon, {Hwan Sung} and Kim, {Sang Kyun} and Cho, {Hyeon Mo} and Yoon, {Kyong Ho} and Kim, {Jong Seob} and Tuwon Chang and Seongho Shin",

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doi = "10.1117/12.804695",

language = "English",

volume = "7140",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Lithography Asia 2008 ; Conference date: 04-11-2008 Through 06-11-2008",

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TY - JOUR

T1 - Use of spin-on-hard mask materials for nano scale patterning technology

AU - Wu, Wen Hao

AU - Chang, Edward Y.

AU - Cheon, Hwan Sung

AU - Kim, Sang Kyun

AU - Cho, Hyeon Mo

AU - Yoon, Kyong Ho

AU - Kim, Jong Seob

AU - Chang, Tuwon

AU - Shin, Seongho

PY - 2008

Y1 - 2008

N2 - Amorphous Carbon Layer (ACL) and SiON system has been proven to be a good hardmask combination. These layers are formed by a high cost, low throughput CVD process. This paper discloses a reliable, low cost, high throughput process using a simple spin on layer structure. Through manipulation of various parameters, additional BARC layer is eliminated and the process is further simplified to a tri-layer structure. Also, PR/SiON/C-SOH (Carbon-Spin-On- Hardmask) system has been compared to PR / Si-SOH (Si-Spin-On-Hardmask) / C-SOH system and found their performances are comparable. This indicates the PR / Si-SOH / C-SOH process is an economical yet comparable substitute.

AB - Amorphous Carbon Layer (ACL) and SiON system has been proven to be a good hardmask combination. These layers are formed by a high cost, low throughput CVD process. This paper discloses a reliable, low cost, high throughput process using a simple spin on layer structure. Through manipulation of various parameters, additional BARC layer is eliminated and the process is further simplified to a tri-layer structure. Also, PR/SiON/C-SOH (Carbon-Spin-On- Hardmask) system has been compared to PR / Si-SOH (Si-Spin-On-Hardmask) / C-SOH system and found their performances are comparable. This indicates the PR / Si-SOH / C-SOH process is an economical yet comparable substitute.

KW - Amorphous carbon layer (ACL)

KW - Etch selectivity

KW - Spin-on organic hardmask

KW - Tri-layer resist process (TLR)

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DO - 10.1117/12.804695

M3 - Conference article

AN - SCOPUS:62449328177

SN - 0277-786X

VL - 7140

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

M1 - 71402Q

T2 - Lithography Asia 2008

Y2 - 4 November 2008 through 6 November 2008

ER -

Use of spin-on-hard mask materials for nano scale patterning technology

Abstract

All Science Journal Classification (ASJC) codes

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