Use of ordered mesoporous SiO₂ as protection against thermal disturbance in phase-change memory

Engineering

• Phase Change Memory 100%
• Neighboring Cell 66%
• Thin Films 33%
• Porosity 33%
• Low Power Consumption 33%
• Low Thermal Conductivity 33%
• Layer Structure 33%
• Sio2 Film 33%
• Dielectrics 33%
• Hybrid Layer 33%
• Drastic Change 33%
• Temperature 33%
• Heat Transfer 33%
• Specific Temperature 33%