To commercialize phase change memory (PCM), a drastic change of resistivity at specific temperatures and a low power consumption to minimize heat transfer to neighboring cells are needed. Therefore, in this work, an ordered mesoporous SiO2 thin film of 45% porosity was introduced as an intercell dielectric in Ge1Sb4Te7 PCM because it has a low thermal conductivity (0.177 W/m K). By using a hybrid layer structure of mesoporous and dense SiO2 films, the temperature of neighboring cells could be decreased from 393.3 K to 353.2 K, corresponding to a 100-fold change in resistivity.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2012R1A2A2A01011014).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)