Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

Yong Hyeon Shin; Min Soo Bae; Chuntaek Park; Joung Won Park; Hyunwoo Park; Yong Ju Lee; Ilgu Yun

doi:10.1088/1361-6641/aac063

Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

Yong Hyeon Shin, Min Soo Bae, Chuntaek Park, Joung Won Park, Hyunwoo Park, Yong Ju Lee, Ilgu Yun

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young's approximation based solution for one-dimensional Poisson's equations the total inversion charge density (Q _inv) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel's surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

Original language	English
Article number	065010
Journal	Semiconductor Science and Technology
Volume	33
Issue number	6
DOIs	https://doi.org/10.1088/1361-6641/aac063
Publication status	Published - 2018 May 16

Bibliographical note

Funding Information:
This work was supported by the Institute of BioMed-IT, Energy-IT, and Smart-IT Technology (BEST), a Brain Korea 21 plus program, Yonsei University, and Qualcomm Inc.

Publisher Copyright:
© 2018 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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Cite this

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title = "Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects",

abstract = "A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young's approximation based solution for one-dimensional Poisson's equations the total inversion charge density (Q inv) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel's surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.",

author = "Shin, {Yong Hyeon} and Bae, {Min Soo} and Chuntaek Park and Park, {Joung Won} and Hyunwoo Park and Lee, {Yong Ju} and Ilgu Yun",

note = "Funding Information: This work was supported by the Institute of BioMed-IT, Energy-IT, and Smart-IT Technology (BEST), a Brain Korea 21 plus program, Yonsei University, and Qualcomm Inc. Publisher Copyright: {\textcopyright} 2018 IOP Publishing Ltd.",

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AU - Park, Joung Won

AU - Park, Hyunwoo

AU - Lee, Yong Ju

AU - Yun, Ilgu

N1 - Funding Information: This work was supported by the Institute of BioMed-IT, Energy-IT, and Smart-IT Technology (BEST), a Brain Korea 21 plus program, Yonsei University, and Qualcomm Inc. Publisher Copyright: © 2018 IOP Publishing Ltd.

PY - 2018/5/16

Y1 - 2018/5/16

N2 - A universal core model for multiple-gate (MG) field-effect transistors (FETs) with short channel effects (SCEs) and quantum mechanical effects (QMEs) is proposed. By using a Young's approximation based solution for one-dimensional Poisson's equations the total inversion charge density (Q inv) in the channel is modeled for double-gate (DG) and surrounding-gate SG (SG) FETs, following which a universal charge model is derived based on the similarity of the solutions, including for quadruple-gate (QG) FETs. For triple-gate (TG) FETs, the average of DG and QG FETs are used. A SCEs model is also proposed considering the potential difference between the channel's surface and center. Finally, a QMEs model for MG FETs is developed using the quantum correction compact model. The proposed universal core model is validated on commercially available three-dimensional ATLAS numerical simulations.

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Universal core model for multiple-gate field-effect transistors with short channel and quantum mechanical effects

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