Uniform, large-area self-limiting layer synthesis of tungsten diselenide

Kyunam Park; Youngjun Kim; Jeong Gyu Song; Seok Jin Kim; Chang Wanlee; Gyeong Hee Ryu; Zonghoon Lee; Jusang Park; Hyungjun Kim

doi:10.1088/2053-1583/3/1/014004

Uniform, large-area self-limiting layer synthesis of tungsten diselenide

Kyunam Park, Youngjun Kim, Jeong Gyu Song, Seok Jin Kim, Chang Wanlee, Gyeong Hee Ryu, Zonghoon Lee, Jusang Park, Hyungjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

Aprocess for the self-limited layer synthesis (SLS) of WSe₂ on SiO2 substrates has been developed that provides systematic layer number controllability with micrometer-scale (>90%) and wafer-scale (∼8 cm) uniformity suitable electronic and optoelectronic device applications. This was confirmed by the fabrication and testing of a WSe₂ back-gated field effect transistor (FET) using Pd (30 nm) as the contact metal, which exhibited p-type behavior with an on/off ratio of∼10⁶ and a field-effect hole mobility of 2.2 cm² V^-1 s^-1 value, which was higher than has been reported for WSe₂-based FETs produced by conventional chemical vapor deposition. Onthe basis of these results, it is proposed that the SLS method is universally applicable to a range of device applications.

Original language	English
Article number	014004
Journal	2D Materials
Volume	3
Issue number	1
DOIs	https://doi.org/10.1088/2053-1583/3/1/014004
Publication status	Published - 2016 Jan 22

Bibliographical note

Funding Information:
This work was supported by the Center for Integrated Smart Sensors funded by the Ministry of Science, ICT & Future Planning as Global Frontier Project (CISS-2011-0031848); this work was supported by Korea Evaluation Institute of Industrial Technology (KEIT) funded by the Ministry of Trade, Industry and Energy (MOTIE) (Project No. 10050296, Large scale (Over 8") synthesis and evaluation technology of twodimensional chalcogenides for next generation electronic devices); this work was supported by Samsung Display Co., Ltd.; and a National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. NRF-2014R1A2A1A11052588).

Publisher Copyright:
© 2016 IOP Publishing Ltd.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1088/2053-1583/3/1/014004

Cite this

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abstract = "Aprocess for the self-limited layer synthesis (SLS) of WSe2 on SiO2 substrates has been developed that provides systematic layer number controllability with micrometer-scale (>90%) and wafer-scale (∼8 cm) uniformity suitable electronic and optoelectronic device applications. This was confirmed by the fabrication and testing of a WSe2 back-gated field effect transistor (FET) using Pd (30 nm) as the contact metal, which exhibited p-type behavior with an on/off ratio of∼106 and a field-effect hole mobility of 2.2 cm2 V-1 s-1 value, which was higher than has been reported for WSe2-based FETs produced by conventional chemical vapor deposition. Onthe basis of these results, it is proposed that the SLS method is universally applicable to a range of device applications.",

author = "Kyunam Park and Youngjun Kim and Song, {Jeong Gyu} and Kim, {Seok Jin} and Chang Wanlee and Ryu, {Gyeong Hee} and Zonghoon Lee and Jusang Park and Hyungjun Kim",

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AU - Lee, Zonghoon

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N2 - Aprocess for the self-limited layer synthesis (SLS) of WSe2 on SiO2 substrates has been developed that provides systematic layer number controllability with micrometer-scale (>90%) and wafer-scale (∼8 cm) uniformity suitable electronic and optoelectronic device applications. This was confirmed by the fabrication and testing of a WSe2 back-gated field effect transistor (FET) using Pd (30 nm) as the contact metal, which exhibited p-type behavior with an on/off ratio of∼106 and a field-effect hole mobility of 2.2 cm2 V-1 s-1 value, which was higher than has been reported for WSe2-based FETs produced by conventional chemical vapor deposition. Onthe basis of these results, it is proposed that the SLS method is universally applicable to a range of device applications.

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Uniform, large-area self-limiting layer synthesis of tungsten diselenide

Abstract

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