Unconventional transport through graphene on SrTiO 3: A plausible effect of SrTiO3 phase-transitions

Surajit Saha; Orhan Kahya; Manu Jaiswal; Amar Srivastava; Anil Annadi; Jayakumar Balakrishnan; Alexandre Pachoud; Chee Tat Toh; Byung Hee Hong; Jong Hyun Ahn; T. Venkatesan; Barbaros Özyilmaz

doi:10.1038/srep06173

Unconventional transport through graphene on SrTiO 3: A plausible effect of SrTiO₃ phase-transitions

Surajit Saha, Orhan Kahya, Manu Jaiswal, Amar Srivastava, Anil Annadi, Jayakumar Balakrishnan, Alexandre Pachoud, Chee Tat Toh, Byung Hee Hong, Jong Hyun Ahn, T. Venkatesan, Barbaros Özyilmaz

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO₃ (STO) thin film substrate. At carrier densities away from charge neutrality point the temperature-dependent resistivity of our graphene samples on both STO and SiO₂/Si substrates show metallic behavior with contributions from Coulomb scattering and flexural phonons attributable to the presence of characteristic quasi-periodic nano-ripple arrays. Significantly, for graphene samples on STO substrates we observe an anomalous 'slope-break' in the temperature-dependent resistivity for T550 to 100 K accompanied by a decrease in mobility above 30 K. Furthermore, we observe an unusual decrease in the gate-induced doping-rate at low temperatures, despite an increase in dielectric constant of the substrate. We believe that a complex mechanism is at play as a consequence of the structural phase transition of the underlying substrate showing an anomalous transport behavior in graphene on STO. The anomalies are discussed in the context of Coulomb as well as phonon scattering.

Original language	English
Article number	6173
Journal	Scientific reports
Volume	4
DOIs	https://doi.org/10.1038/srep06173
Publication status	Published - 2014 Aug 22

Bibliographical note

Funding Information:
We would like to acknowledge for financial support from NRF-CRP ‘‘Tailoring Oxide Electronics by Atomic Control’’ Grant No. NRF2008NRFCRP002-024, CRP Award No. NRF-CRP9-2011-3, NUS cross-faculty grant, FRC, BMBF, the Singapore National Research Foundation [grants NRF-RF2008-07, NRF-CRP(R-144-000-295-281), SMF-NUS Research Horizon (Phase II), NUS-Young Investor Award (R144-000-283-101), IMRE/10-1C0109, and NUS/SMF], U.S. Office of Naval Research (ONR and ONR Global), and the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Global Research Lab. 20110021972, 2011K000615, 20110017587, 20110006268, and Global Frontier Research Program 20110031629).

All Science Journal Classification (ASJC) codes

General

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10.1038/srep06173

Cite this

@article{fec7d4557339478b857820d3b865c162,

title = "Unconventional transport through graphene on SrTiO 3: A plausible effect of SrTiO3 phase-transitions",

abstract = "High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO3 (STO) thin film substrate. At carrier densities away from charge neutrality point the temperature-dependent resistivity of our graphene samples on both STO and SiO2/Si substrates show metallic behavior with contributions from Coulomb scattering and flexural phonons attributable to the presence of characteristic quasi-periodic nano-ripple arrays. Significantly, for graphene samples on STO substrates we observe an anomalous 'slope-break' in the temperature-dependent resistivity for T550 to 100 K accompanied by a decrease in mobility above 30 K. Furthermore, we observe an unusual decrease in the gate-induced doping-rate at low temperatures, despite an increase in dielectric constant of the substrate. We believe that a complex mechanism is at play as a consequence of the structural phase transition of the underlying substrate showing an anomalous transport behavior in graphene on STO. The anomalies are discussed in the context of Coulomb as well as phonon scattering.",

author = "Surajit Saha and Orhan Kahya and Manu Jaiswal and Amar Srivastava and Anil Annadi and Jayakumar Balakrishnan and Alexandre Pachoud and Toh, {Chee Tat} and Hong, {Byung Hee} and Ahn, {Jong Hyun} and T. Venkatesan and Barbaros {\"O}zyilmaz",

note = "Funding Information: We would like to acknowledge for financial support from NRF-CRP {\textquoteleft}{\textquoteleft}Tailoring Oxide Electronics by Atomic Control{\textquoteright}{\textquoteright} Grant No. NRF2008NRFCRP002-024, CRP Award No. NRF-CRP9-2011-3, NUS cross-faculty grant, FRC, BMBF, the Singapore National Research Foundation [grants NRF-RF2008-07, NRF-CRP(R-144-000-295-281), SMF-NUS Research Horizon (Phase II), NUS-Young Investor Award (R144-000-283-101), IMRE/10-1C0109, and NUS/SMF], U.S. Office of Naval Research (ONR and ONR Global), and the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Global Research Lab. 20110021972, 2011K000615, 20110017587, 20110006268, and Global Frontier Research Program 20110031629).",

year = "2014",

month = aug,

day = "22",

doi = "10.1038/srep06173",

language = "English",

volume = "4",

journal = "Scientific reports",

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T1 - Unconventional transport through graphene on SrTiO 3

T2 - A plausible effect of SrTiO3 phase-transitions

AU - Saha, Surajit

AU - Kahya, Orhan

AU - Jaiswal, Manu

AU - Srivastava, Amar

AU - Annadi, Anil

AU - Balakrishnan, Jayakumar

AU - Pachoud, Alexandre

AU - Toh, Chee Tat

AU - Hong, Byung Hee

AU - Ahn, Jong Hyun

AU - Venkatesan, T.

AU - Özyilmaz, Barbaros

N1 - Funding Information: We would like to acknowledge for financial support from NRF-CRP ‘‘Tailoring Oxide Electronics by Atomic Control’’ Grant No. NRF2008NRFCRP002-024, CRP Award No. NRF-CRP9-2011-3, NUS cross-faculty grant, FRC, BMBF, the Singapore National Research Foundation [grants NRF-RF2008-07, NRF-CRP(R-144-000-295-281), SMF-NUS Research Horizon (Phase II), NUS-Young Investor Award (R144-000-283-101), IMRE/10-1C0109, and NUS/SMF], U.S. Office of Naval Research (ONR and ONR Global), and the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Global Research Lab. 20110021972, 2011K000615, 20110017587, 20110006268, and Global Frontier Research Program 20110031629).

PY - 2014/8/22

Y1 - 2014/8/22

N2 - High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO3 (STO) thin film substrate. At carrier densities away from charge neutrality point the temperature-dependent resistivity of our graphene samples on both STO and SiO2/Si substrates show metallic behavior with contributions from Coulomb scattering and flexural phonons attributable to the presence of characteristic quasi-periodic nano-ripple arrays. Significantly, for graphene samples on STO substrates we observe an anomalous 'slope-break' in the temperature-dependent resistivity for T550 to 100 K accompanied by a decrease in mobility above 30 K. Furthermore, we observe an unusual decrease in the gate-induced doping-rate at low temperatures, despite an increase in dielectric constant of the substrate. We believe that a complex mechanism is at play as a consequence of the structural phase transition of the underlying substrate showing an anomalous transport behavior in graphene on STO. The anomalies are discussed in the context of Coulomb as well as phonon scattering.

AB - High-k dielectric oxides are supposedly ideal gate-materials for ultra-high doping in graphene and other 2D-crystals. Here, we report a temperature-dependent electronic transport study on chemical vapor deposited-graphene gated with SrTiO3 (STO) thin film substrate. At carrier densities away from charge neutrality point the temperature-dependent resistivity of our graphene samples on both STO and SiO2/Si substrates show metallic behavior with contributions from Coulomb scattering and flexural phonons attributable to the presence of characteristic quasi-periodic nano-ripple arrays. Significantly, for graphene samples on STO substrates we observe an anomalous 'slope-break' in the temperature-dependent resistivity for T550 to 100 K accompanied by a decrease in mobility above 30 K. Furthermore, we observe an unusual decrease in the gate-induced doping-rate at low temperatures, despite an increase in dielectric constant of the substrate. We believe that a complex mechanism is at play as a consequence of the structural phase transition of the underlying substrate showing an anomalous transport behavior in graphene on STO. The anomalies are discussed in the context of Coulomb as well as phonon scattering.

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