Ultraviolet photodetector based on single GaN nanorod p-n junctions

M. S. Son, S. I. Im, Y. S. Park, C. M. Park, T. W. Kang, K. H. Yoo

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36 Citations (Scopus)


The fabrication and characterization of ultraviolet photodetectors based on single GaN nanorod p-n junctions are reported. Single nanorod p-n junctions within individual GaN nanorods were grown by using the plasma-assisted molecular beam epitaxy. In order to form the p-n junction at the middle of the nanorod, the dopant was changed from Si (n-type) to Mg (p-type) during the growth procedure. These single GaN nanorod p-n junction diodes have exhibited a rectifying behavior and a photocurrent effect under ultraviolet illumination.

Original languageEnglish
Pages (from-to)886-888
Number of pages3
JournalMaterials Science and Engineering C
Issue number5-7
Publication statusPublished - 2006 Jul

Bibliographical note

Funding Information:
This work was supported by KOSEF through the Nanomedical Research Center at Yonsei University and the QSRC at Dongguk University.

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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