Abstract
We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (1 0 0) substrate. Our deposited p-NiO film was found to have a hole concentration of ∼10 19 cm -3 according to Hall measurements. Current-voltage (I-V) characteristics of our photodiode were measured in the dark and under ultra-violet (UV)-vis light illuminations (290 nm, 325 nm, 460 nm, 540 nm, and 633 nm) at room temperature (RT). The photo-responsivity of our photodiode appeared almost saturated even at 0 V, showing good photo-voltaic properties. The responsivity was as high as ∼0.36 A/W at 0 V and ∼0.40 A/W at 30 V for visible light (633 nm) while it was 0.15 A/W at 0 V and 0.17 A/W at 30 V for UV (290 nm).
| Original language | English |
|---|---|
| Pages (from-to) | 435-438 |
| Number of pages | 4 |
| Journal | Applied Surface Science |
| Volume | 244 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - 2005 May 15 |
| Event | 12th International Conference on Solid Films and Surfaces - Hammatsu, Japan Duration: 2004 Jun 21 → 2004 Jun 25 |
Bibliographical note
Funding Information:The authors are very appreciative of the financial support from KISTEP (Program no. M1-0214-00-0228), and YTCC (Yonsei Techno Cooperation Center, project year 2004). They also acknowledge the support from Brain Korea 21 Program.
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films