Ultraviolet enhanced Si-photodetector using p-NiO films

Jeong M. Choi, Seongil Im

Research output: Contribution to journalConference articlepeer-review

80 Citations (Scopus)


We report on the properties of a heterojunction photodiode composed of p-type NiO and n-type Si. This photodetector was fabricated by evaporating NiO powders on Si (1 0 0) substrate. Our deposited p-NiO film was found to have a hole concentration of ∼10 19 cm -3 according to Hall measurements. Current-voltage (I-V) characteristics of our photodiode were measured in the dark and under ultra-violet (UV)-vis light illuminations (290 nm, 325 nm, 460 nm, 540 nm, and 633 nm) at room temperature (RT). The photo-responsivity of our photodiode appeared almost saturated even at 0 V, showing good photo-voltaic properties. The responsivity was as high as ∼0.36 A/W at 0 V and ∼0.40 A/W at 30 V for visible light (633 nm) while it was 0.15 A/W at 0 V and 0.17 A/W at 30 V for UV (290 nm).

Original languageEnglish
Pages (from-to)435-438
Number of pages4
JournalApplied Surface Science
Issue number1-4
Publication statusPublished - 2005 May 15
Event12th International Conference on Solid Films and Surfaces - Hammatsu, Japan
Duration: 2004 Jun 212004 Jun 25

Bibliographical note

Funding Information:
The authors are very appreciative of the financial support from KISTEP (Program no. M1-0214-00-0228), and YTCC (Yonsei Techno Cooperation Center, project year 2004). They also acknowledge the support from Brain Korea 21 Program.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


Dive into the research topics of 'Ultraviolet enhanced Si-photodetector using p-NiO films'. Together they form a unique fingerprint.

Cite this