Ultraviolet-enhanced device properties in pentacene-based thin-film transistors

Jeong M. Choi; D. K. Hwang; Jung Min Hwang; Jae Hoon Kim; Seongil Im

doi:10.1063/1.2715033

Ultraviolet-enhanced device properties in pentacene-based thin-film transistors

Jeong M. Choi, D. K. Hwang, Jung Min Hwang, Jae Hoon Kim, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

The authors report on the ultraviolet (UV)-enhanced device properties in pentacene-based thin-film transistors (TFTs). Pentacene TFTs showed a degraded mobility and lowered saturation current after illumination by a high energy UV with 254 nm wavelength. However, under 364 nm UV these devices surprisingly displayed enhanced saturation current and also showed threshold voltage shift toward lower values, maintaining their mobilities. The saturation current increase and threshold voltage shift were further related to the negative fixed charges excessively formed at the pentacene/dielectric interface by the low energy UV. The authors thus conclude that a low energy UV could rather enhance the pentacene TFT performances and also control the threshold voltage of the device.

Original language	English
Article number	113515
Journal	Applied Physics Letters
Volume	90
Issue number	11
DOIs	https://doi.org/10.1063/1.2715033
Publication status	Published - 2007

Bibliographical note

Funding Information:
This research was performed with the financial support from KOSEF (Program No. M1-0214-00-0228) and LG Philips LCD (project year 2005). The authors also acknowledge the support from Seoul Science Fellowship and Brain Korea 21 Project. One of the authors (J.H.K.) acknowledges the financial support of eSSC at Postech funded by KOSEF/MOST.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2715033

Cite this

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title = "Ultraviolet-enhanced device properties in pentacene-based thin-film transistors",

abstract = "The authors report on the ultraviolet (UV)-enhanced device properties in pentacene-based thin-film transistors (TFTs). Pentacene TFTs showed a degraded mobility and lowered saturation current after illumination by a high energy UV with 254 nm wavelength. However, under 364 nm UV these devices surprisingly displayed enhanced saturation current and also showed threshold voltage shift toward lower values, maintaining their mobilities. The saturation current increase and threshold voltage shift were further related to the negative fixed charges excessively formed at the pentacene/dielectric interface by the low energy UV. The authors thus conclude that a low energy UV could rather enhance the pentacene TFT performances and also control the threshold voltage of the device.",

author = "Choi, {Jeong M.} and Hwang, {D. K.} and Hwang, {Jung Min} and Kim, {Jae Hoon} and Seongil Im",

note = "Funding Information: This research was performed with the financial support from KOSEF (Program No. M1-0214-00-0228) and LG Philips LCD (project year 2005). The authors also acknowledge the support from Seoul Science Fellowship and Brain Korea 21 Project. One of the authors (J.H.K.) acknowledges the financial support of eSSC at Postech funded by KOSEF/MOST. ",

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AU - Choi, Jeong M.

AU - Hwang, D. K.

AU - Hwang, Jung Min

AU - Kim, Jae Hoon

AU - Im, Seongil

N1 - Funding Information: This research was performed with the financial support from KOSEF (Program No. M1-0214-00-0228) and LG Philips LCD (project year 2005). The authors also acknowledge the support from Seoul Science Fellowship and Brain Korea 21 Project. One of the authors (J.H.K.) acknowledges the financial support of eSSC at Postech funded by KOSEF/MOST.

PY - 2007

Y1 - 2007

N2 - The authors report on the ultraviolet (UV)-enhanced device properties in pentacene-based thin-film transistors (TFTs). Pentacene TFTs showed a degraded mobility and lowered saturation current after illumination by a high energy UV with 254 nm wavelength. However, under 364 nm UV these devices surprisingly displayed enhanced saturation current and also showed threshold voltage shift toward lower values, maintaining their mobilities. The saturation current increase and threshold voltage shift were further related to the negative fixed charges excessively formed at the pentacene/dielectric interface by the low energy UV. The authors thus conclude that a low energy UV could rather enhance the pentacene TFT performances and also control the threshold voltage of the device.

AB - The authors report on the ultraviolet (UV)-enhanced device properties in pentacene-based thin-film transistors (TFTs). Pentacene TFTs showed a degraded mobility and lowered saturation current after illumination by a high energy UV with 254 nm wavelength. However, under 364 nm UV these devices surprisingly displayed enhanced saturation current and also showed threshold voltage shift toward lower values, maintaining their mobilities. The saturation current increase and threshold voltage shift were further related to the negative fixed charges excessively formed at the pentacene/dielectric interface by the low energy UV. The authors thus conclude that a low energy UV could rather enhance the pentacene TFT performances and also control the threshold voltage of the device.

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Ultraviolet-enhanced device properties in pentacene-based thin-film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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