ZnO-based thin film transistors (TFTs) have been fabricated on a SiO 2/p-Si substrate by if magnetron sputtering at room temperature and they exhibited a saturation current level of a few μA under a gate bias of 40V, electron mobility of less than 0.05 cm2/V s, and on/off current ratio of ∼105 in the dark. Illuminated by ultraviolet (UV, λ=340 nm) light with an optical power density of 1.26 mW/cm2, our TFT displayed a high photocurrent gain of more than 50 uA at the same gate bias of 40 V and it also showed that the photocurrent decreases with lowering the UV intensity. In a channel depletion state with a gate bias of -40 V, the photo-detecting sensitivity becomes much higher than in the accumulation state with the gate bias of 40 V.
Bibliographical noteFunding Information:
Authors gratefully acknowledge the financial supports from KISTEP (M20204250033-02A0903-00440) and the Basic Research Program of KOSEF (R01-1999-000-00030-0), and in part from the BK 21 Program.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry