Ultraviolet detecting properties of ZnO-based thin film transistors

H. S. Bae; Seongil Im

doi:10.1016/j.tsf.2004.06.196

Ultraviolet detecting properties of ZnO-based thin film transistors

H. S. Bae, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

71 Citations (Scopus)

Abstract

ZnO-based thin film transistors (TFTs) have been fabricated on a SiO ₂/p-Si substrate by if magnetron sputtering at room temperature and they exhibited a saturation current level of a few μA under a gate bias of 40V, electron mobility of less than 0.05 cm²/V s, and on/off current ratio of ∼10⁵ in the dark. Illuminated by ultraviolet (UV, λ=340 nm) light with an optical power density of 1.26 mW/cm², our TFT displayed a high photocurrent gain of more than 50 uA at the same gate bias of 40 V and it also showed that the photocurrent decreases with lowering the UV intensity. In a channel depletion state with a gate bias of -40 V, the photo-detecting sensitivity becomes much higher than in the accumulation state with the gate bias of 40 V.

Original language	English
Pages (from-to)	75-79
Number of pages	5
Journal	Thin Solid Films
Volume	469-470
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.tsf.2004.06.196
Publication status	Published - 2004 Dec 22

Bibliographical note

Funding Information:
Authors gratefully acknowledge the financial supports from KISTEP (M20204250033-02A0903-00440) and the Basic Research Program of KOSEF (R01-1999-000-00030-0), and in part from the BK 21 Program.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2004.06.196

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title = "Ultraviolet detecting properties of ZnO-based thin film transistors",

abstract = "ZnO-based thin film transistors (TFTs) have been fabricated on a SiO 2/p-Si substrate by if magnetron sputtering at room temperature and they exhibited a saturation current level of a few μA under a gate bias of 40V, electron mobility of less than 0.05 cm2/V s, and on/off current ratio of ∼105 in the dark. Illuminated by ultraviolet (UV, λ=340 nm) light with an optical power density of 1.26 mW/cm2, our TFT displayed a high photocurrent gain of more than 50 uA at the same gate bias of 40 V and it also showed that the photocurrent decreases with lowering the UV intensity. In a channel depletion state with a gate bias of -40 V, the photo-detecting sensitivity becomes much higher than in the accumulation state with the gate bias of 40 V.",

author = "Bae, {H. S.} and Seongil Im",

note = "Funding Information: Authors gratefully acknowledge the financial supports from KISTEP (M20204250033-02A0903-00440) and the Basic Research Program of KOSEF (R01-1999-000-00030-0), and in part from the BK 21 Program.",

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T1 - Ultraviolet detecting properties of ZnO-based thin film transistors

AU - Bae, H. S.

AU - Im, Seongil

N1 - Funding Information: Authors gratefully acknowledge the financial supports from KISTEP (M20204250033-02A0903-00440) and the Basic Research Program of KOSEF (R01-1999-000-00030-0), and in part from the BK 21 Program.

PY - 2004/12/22

Y1 - 2004/12/22

N2 - ZnO-based thin film transistors (TFTs) have been fabricated on a SiO 2/p-Si substrate by if magnetron sputtering at room temperature and they exhibited a saturation current level of a few μA under a gate bias of 40V, electron mobility of less than 0.05 cm2/V s, and on/off current ratio of ∼105 in the dark. Illuminated by ultraviolet (UV, λ=340 nm) light with an optical power density of 1.26 mW/cm2, our TFT displayed a high photocurrent gain of more than 50 uA at the same gate bias of 40 V and it also showed that the photocurrent decreases with lowering the UV intensity. In a channel depletion state with a gate bias of -40 V, the photo-detecting sensitivity becomes much higher than in the accumulation state with the gate bias of 40 V.

AB - ZnO-based thin film transistors (TFTs) have been fabricated on a SiO 2/p-Si substrate by if magnetron sputtering at room temperature and they exhibited a saturation current level of a few μA under a gate bias of 40V, electron mobility of less than 0.05 cm2/V s, and on/off current ratio of ∼105 in the dark. Illuminated by ultraviolet (UV, λ=340 nm) light with an optical power density of 1.26 mW/cm2, our TFT displayed a high photocurrent gain of more than 50 uA at the same gate bias of 40 V and it also showed that the photocurrent decreases with lowering the UV intensity. In a channel depletion state with a gate bias of -40 V, the photo-detecting sensitivity becomes much higher than in the accumulation state with the gate bias of 40 V.

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ER -

Ultraviolet detecting properties of ZnO-based thin film transistors

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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