Ultraviolet detecting properties of ZnO-based thin film transistors

H. S. Bae, Seongil Im

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71 Citations (Scopus)


ZnO-based thin film transistors (TFTs) have been fabricated on a SiO 2/p-Si substrate by if magnetron sputtering at room temperature and they exhibited a saturation current level of a few μA under a gate bias of 40V, electron mobility of less than 0.05 cm2/V s, and on/off current ratio of ∼105 in the dark. Illuminated by ultraviolet (UV, λ=340 nm) light with an optical power density of 1.26 mW/cm2, our TFT displayed a high photocurrent gain of more than 50 uA at the same gate bias of 40 V and it also showed that the photocurrent decreases with lowering the UV intensity. In a channel depletion state with a gate bias of -40 V, the photo-detecting sensitivity becomes much higher than in the accumulation state with the gate bias of 40 V.

Original languageEnglish
Pages (from-to)75-79
Number of pages5
JournalThin Solid Films
Issue numberSPEC. ISS.
Publication statusPublished - 2004 Dec 22

Bibliographical note

Funding Information:
Authors gratefully acknowledge the financial supports from KISTEP (M20204250033-02A0903-00440) and the Basic Research Program of KOSEF (R01-1999-000-00030-0), and in part from the BK 21 Program.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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