Ultralow dielectric cross-linked silica aerogel nanocomposite films for interconnect technology

Haryeong Choi, Taehee Kim, Taeho Kim, Sunil Moon, Sang Hyuk Yoo, Vinayak G. Parale, Rushikesh P. Dhavale, Keonwook Kang, Hyunchul Sohn, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

An increase in resistance and capacitance (RC) delay has been a critical issue in reducing integrated circuit scales. The delay is successfully reduced using low dielectric constant (κ) interconnects and porous low-κ materials adopted in real devices. However, an increase in porosity could lower κ values with a dramatic decrease in elastic modulus, which would not sustain the stress during the packaging process. Highly porous cross-linked silica aerogel thin film with an ultralow-κ value of 1.7 applied to nanodevice interconnect technology has been suggested. Cross-linking using an epoxide ring-opening reaction produced a high elastic modulus (> 5.1 GPa), stable enough to sustain the chemical mechanical polishing (CMP) and the plasma dry etching process. The thickness of aerogel films is approximately 700 nm with a hydrophobic surface. Closed-surface pores created by selective solvent evaporation can prevent metal penetration. Our cross-linked aerogel films are the first among the low-dielectric aerogel films validated as interlayer low-dielectric materials and robust candidates for ultralow -κ dielectric materials.

Original languageEnglish
Article number101536
JournalApplied Materials Today
Volume28
DOIs
Publication statusPublished - 2022 Aug

Bibliographical note

Publisher Copyright:
© 2022 Elsevier Ltd

All Science Journal Classification (ASJC) codes

  • General Materials Science

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