Abstract
Ultrafast phenomena of photoinduced absorption far below the band gap of CdS0.4Se0.6 nanostructure semiconductors doped in glasses were investigated by using time-resolved differential transmittance spectroscopy. The carriers populating the semiconductor-glass interfaces within less than 1 ps after photoexcitation give rise to ultrafast photoinduced absorption. This transient photoinduced absorption decays with a lifetime shorter than 10 ps, which strongly depends on the excitation intensity. We assign this behavior to nongeminate electron-hole recombination at the semiconductor-glass interfaces.
| Original language | English |
|---|---|
| Pages (from-to) | 43-46 |
| Number of pages | 4 |
| Journal | Optics Communications |
| Volume | 155 |
| Issue number | 1-3 |
| DOIs | |
| Publication status | Published - 1998 Oct 1 |
Bibliographical note
Funding Information:This work has been supported by the Creative Research Initiatives of the Ministry of Science and Technology of Korea.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering