Ultrafast Photo-Response by Surface State-Mediated Optical Transitions in Topological Insulator Bi2Te3 Nanowire

Dambi Park; Kwangsik Jeong; In Hee Maeng; Dajung Kim; Hoedon Kwon; Seok Bo Hong; Jae Hoon Kim; Chul Sik Kee; Chul Kang; Mann Ho Cho

doi:10.1002/adom.201900621

Ultrafast Photo-Response by Surface State-Mediated Optical Transitions in Topological Insulator Bi₂Te₃ Nanowire

Dambi Park, Kwangsik Jeong, In Hee Maeng, Dajung Kim, Hoedon Kwon, Seok Bo Hong, Jae Hoon Kim, Chul Sik Kee, Chul Kang, Mann Ho Cho

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Topological insulators are a new class of materials with highly interesting optoelectronic properties such as strong light absorption, polarization-dependent surface photocurrent, and topological phase transitions. In the present study, anomalous characteristics of the topological surface state (TSS) are discovered in a single-crystalline Bi₂Te₃ nanowire (NW) through mediated optical transitions by utilizing an optical pump-THz probe. As a result, ultra-fast carrier recombination occurs owing to the presence of TSS, and a phonon frequency shift occurs due to enhanced electron–phonon interaction. In particular, the large optical absorption of the second TSS is closely related to high optical conductivity. The photoresponse for visible light in Bi₂Te₃ NW with TSS represents a remarkable improvement. The result indicates that the presence of (first and second) TSS and quantum well 2D electron gas effectively contributes to the significant improvement in photocurrent sensitivity by enhancement of the photocurrent generation. In summary, TSS-assisted optical transitions affect the efficiency of the optoelectronic device.

Original language	English
Article number	1900621
Journal	Advanced Optical Materials
Volume	7
Issue number	19
DOIs	https://doi.org/10.1002/adom.201900621
Publication status	Published - 2019 Oct 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Grant No. 2018R1A2A1A05023214) and by Samsung Research Funding Center of Samsung Electronics under Project No. SRFC-MA1502-01. This work was supported by the Gwangju Institute of Science and Technology (GIST) Research Institute (GRI) grant funded by the GIST in 2019. The authors would like to thank Young Boo Lee and Hee-Suk Chung at the Korea Basic Science Institute for technical assistance with TEM.

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics

Access to Document

10.1002/adom.201900621

Cite this

@article{370b98a76d2446388492e5275ca846e4,

title = "Ultrafast Photo-Response by Surface State-Mediated Optical Transitions in Topological Insulator Bi2Te3 Nanowire",

abstract = "Topological insulators are a new class of materials with highly interesting optoelectronic properties such as strong light absorption, polarization-dependent surface photocurrent, and topological phase transitions. In the present study, anomalous characteristics of the topological surface state (TSS) are discovered in a single-crystalline Bi2Te3 nanowire (NW) through mediated optical transitions by utilizing an optical pump-THz probe. As a result, ultra-fast carrier recombination occurs owing to the presence of TSS, and a phonon frequency shift occurs due to enhanced electron–phonon interaction. In particular, the large optical absorption of the second TSS is closely related to high optical conductivity. The photoresponse for visible light in Bi2Te3 NW with TSS represents a remarkable improvement. The result indicates that the presence of (first and second) TSS and quantum well 2D electron gas effectively contributes to the significant improvement in photocurrent sensitivity by enhancement of the photocurrent generation. In summary, TSS-assisted optical transitions affect the efficiency of the optoelectronic device.",

author = "Dambi Park and Kwangsik Jeong and Maeng, {In Hee} and Dajung Kim and Hoedon Kwon and Hong, {Seok Bo} and Kim, {Jae Hoon} and Kee, {Chul Sik} and Chul Kang and Cho, {Mann Ho}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Grant No. 2018R1A2A1A05023214) and by Samsung Research Funding Center of Samsung Electronics under Project No. SRFC-MA1502-01. This work was supported by the Gwangju Institute of Science and Technology (GIST) Research Institute (GRI) grant funded by the GIST in 2019. The authors would like to thank Young Boo Lee and Hee-Suk Chung at the Korea Basic Science Institute for technical assistance with TEM. Publisher Copyright: {\textcopyright} 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

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AU - Park, Dambi

AU - Jeong, Kwangsik

AU - Maeng, In Hee

AU - Kim, Dajung

AU - Kwon, Hoedon

AU - Hong, Seok Bo

AU - Kim, Jae Hoon

AU - Kee, Chul Sik

AU - Kang, Chul

AU - Cho, Mann Ho

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (Grant No. 2018R1A2A1A05023214) and by Samsung Research Funding Center of Samsung Electronics under Project No. SRFC-MA1502-01. This work was supported by the Gwangju Institute of Science and Technology (GIST) Research Institute (GRI) grant funded by the GIST in 2019. The authors would like to thank Young Boo Lee and Hee-Suk Chung at the Korea Basic Science Institute for technical assistance with TEM. Publisher Copyright: © 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2019/10/1

Y1 - 2019/10/1

N2 - Topological insulators are a new class of materials with highly interesting optoelectronic properties such as strong light absorption, polarization-dependent surface photocurrent, and topological phase transitions. In the present study, anomalous characteristics of the topological surface state (TSS) are discovered in a single-crystalline Bi2Te3 nanowire (NW) through mediated optical transitions by utilizing an optical pump-THz probe. As a result, ultra-fast carrier recombination occurs owing to the presence of TSS, and a phonon frequency shift occurs due to enhanced electron–phonon interaction. In particular, the large optical absorption of the second TSS is closely related to high optical conductivity. The photoresponse for visible light in Bi2Te3 NW with TSS represents a remarkable improvement. The result indicates that the presence of (first and second) TSS and quantum well 2D electron gas effectively contributes to the significant improvement in photocurrent sensitivity by enhancement of the photocurrent generation. In summary, TSS-assisted optical transitions affect the efficiency of the optoelectronic device.

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