Ultrafast Hot-Carrier Photovoltaics of Type-I Monolayer Heterojunctions in the Broad Spectral Ranges

Ji Ho Sung; Soonyoung Cha; Hoseok Heo; Sangwan Sim; Juho Kim; Hyunyong Choi; Moon Ho Jo

doi:10.1021/acsphotonics.6b00846

Ultrafast Hot-Carrier Photovoltaics of Type-I Monolayer Heterojunctions in the Broad Spectral Ranges

Ji Ho Sung, Soonyoung Cha, Hoseok Heo, Sangwan Sim, Juho Kim, Hyunyong Choi, Moon Ho Jo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Strong interlayer photoresponses in monolayer (ML) semiconductor stacks, such as substantial light absorption and charge separation across interlayer band alignments, suggest potentials for two-dimensional photovoltaics (PVs). Here, we report an interlayer PV conversion in a type-I ML heterojunction by ultrafast interlayer transfer of photoexcited hot carriers in the broad spectral ranges. Specifically, low-energy photoexcitation on a stack of a narrow-band-gap (E_g) Bi₂Te₃ few-layer and a large-E_g MoS₂ ML permits interlayer transfer of transient hot carriers from the Bi₂Te₃ layer to the excitonic states of the neighboring MoS₂ ML within a time scale of ∼70 fs, producing interlayer charge separation. Thereby we achieve substantial conversion efficiency from a MoS₂ ML with visible to infrared light illumination.

Original language	English
Pages (from-to)	429-434
Number of pages	6
Journal	ACS Photonics
Volume	4
Issue number	3
DOIs	https://doi.org/10.1021/acsphotonics.6b00846
Publication status	Published - 2017 Mar 15

Bibliographical note

Funding Information:
This work was supported by the Institute for Basic Science (IBS), Korea, under the Project Code number IBS-R014-A1-2017-a00. S.C., S.S. and H.C. were supported by the National Research Foundation of Korea (NRF) through the government of Korea (MSIP) (Grant No. NRF-2015R1A2A1A10052520 NRF-2016R1A4A1012929).

Publisher Copyright:
© 2017 American Chemical Society.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biotechnology
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1021/acsphotonics.6b00846

Cite this

@article{a92f8ed9499f4e0585f134462a672127,

title = "Ultrafast Hot-Carrier Photovoltaics of Type-I Monolayer Heterojunctions in the Broad Spectral Ranges",

abstract = "Strong interlayer photoresponses in monolayer (ML) semiconductor stacks, such as substantial light absorption and charge separation across interlayer band alignments, suggest potentials for two-dimensional photovoltaics (PVs). Here, we report an interlayer PV conversion in a type-I ML heterojunction by ultrafast interlayer transfer of photoexcited hot carriers in the broad spectral ranges. Specifically, low-energy photoexcitation on a stack of a narrow-band-gap (Eg) Bi2Te3 few-layer and a large-Eg MoS2 ML permits interlayer transfer of transient hot carriers from the Bi2Te3 layer to the excitonic states of the neighboring MoS2 ML within a time scale of ∼70 fs, producing interlayer charge separation. Thereby we achieve substantial conversion efficiency from a MoS2 ML with visible to infrared light illumination.",

author = "Sung, {Ji Ho} and Soonyoung Cha and Hoseok Heo and Sangwan Sim and Juho Kim and Hyunyong Choi and Jo, {Moon Ho}",

note = "Funding Information: This work was supported by the Institute for Basic Science (IBS), Korea, under the Project Code number IBS-R014-A1-2017-a00. S.C., S.S. and H.C. were supported by the National Research Foundation of Korea (NRF) through the government of Korea (MSIP) (Grant No. NRF-2015R1A2A1A10052520 NRF-2016R1A4A1012929). Publisher Copyright: {\textcopyright} 2017 American Chemical Society.",

year = "2017",

month = mar,

day = "15",

doi = "10.1021/acsphotonics.6b00846",

language = "English",

volume = "4",

pages = "429--434",

journal = "ACS Photonics",

issn = "2330-4022",

publisher = "American Chemical Society",

number = "3",

}

TY - JOUR

T1 - Ultrafast Hot-Carrier Photovoltaics of Type-I Monolayer Heterojunctions in the Broad Spectral Ranges

AU - Sung, Ji Ho

AU - Cha, Soonyoung

AU - Heo, Hoseok

AU - Sim, Sangwan

AU - Kim, Juho

AU - Choi, Hyunyong

AU - Jo, Moon Ho

N1 - Funding Information: This work was supported by the Institute for Basic Science (IBS), Korea, under the Project Code number IBS-R014-A1-2017-a00. S.C., S.S. and H.C. were supported by the National Research Foundation of Korea (NRF) through the government of Korea (MSIP) (Grant No. NRF-2015R1A2A1A10052520 NRF-2016R1A4A1012929). Publisher Copyright: © 2017 American Chemical Society.

PY - 2017/3/15

Y1 - 2017/3/15

N2 - Strong interlayer photoresponses in monolayer (ML) semiconductor stacks, such as substantial light absorption and charge separation across interlayer band alignments, suggest potentials for two-dimensional photovoltaics (PVs). Here, we report an interlayer PV conversion in a type-I ML heterojunction by ultrafast interlayer transfer of photoexcited hot carriers in the broad spectral ranges. Specifically, low-energy photoexcitation on a stack of a narrow-band-gap (Eg) Bi2Te3 few-layer and a large-Eg MoS2 ML permits interlayer transfer of transient hot carriers from the Bi2Te3 layer to the excitonic states of the neighboring MoS2 ML within a time scale of ∼70 fs, producing interlayer charge separation. Thereby we achieve substantial conversion efficiency from a MoS2 ML with visible to infrared light illumination.

AB - Strong interlayer photoresponses in monolayer (ML) semiconductor stacks, such as substantial light absorption and charge separation across interlayer band alignments, suggest potentials for two-dimensional photovoltaics (PVs). Here, we report an interlayer PV conversion in a type-I ML heterojunction by ultrafast interlayer transfer of photoexcited hot carriers in the broad spectral ranges. Specifically, low-energy photoexcitation on a stack of a narrow-band-gap (Eg) Bi2Te3 few-layer and a large-Eg MoS2 ML permits interlayer transfer of transient hot carriers from the Bi2Te3 layer to the excitonic states of the neighboring MoS2 ML within a time scale of ∼70 fs, producing interlayer charge separation. Thereby we achieve substantial conversion efficiency from a MoS2 ML with visible to infrared light illumination.

UR - http://www.scopus.com/inward/record.url?scp=85015366128&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85015366128&partnerID=8YFLogxK

U2 - 10.1021/acsphotonics.6b00846

DO - 10.1021/acsphotonics.6b00846

M3 - Article

AN - SCOPUS:85015366128

SN - 2330-4022

VL - 4

SP - 429

EP - 434

JO - ACS Photonics

JF - ACS Photonics

IS - 3

ER -

Ultrafast Hot-Carrier Photovoltaics of Type-I Monolayer Heterojunctions in the Broad Spectral Ranges

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this