Abstract
An electron-beam annealing method has been adapted for rapid crystallization of p-type amorphous-silicon thin films deposited by using an evaporation method. The amorphous phase of silicon thin-film was crystallized by using an accelerating DC voltage higher than the 4.0 kV for 120 s. From the crystalline properties, the nanocrystalline silicon thin film after electron-beam annealing showed mainly (111), (220), and (311) orientations and a crystalline volume fraction (Xc) of 93.6%. The crystalline properties improved with increasing DC voltage for rapid annealing times. The electron-beam annealing method can be a powerful method for achieving rapid crystallization of amorphous materials.
| Original language | English |
|---|---|
| Pages (from-to) | 1091-1095 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 64 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2014 Apr |
Bibliographical note
Funding Information:This work was supported by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant funded by the Korea government Ministry of Knowledge Economy (20113020010010).This work was supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0093823).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)