Ultrafast crystallization of amorphous silicon thin films by using an electron beam annealing method

Changheon Kim, Sangwoo Lim, Chaehwan Jeong

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1 Citation (Scopus)


An electron-beam annealing method has been adapted for rapid crystallization of p-type amorphous-silicon thin films deposited by using an evaporation method. The amorphous phase of silicon thin-film was crystallized by using an accelerating DC voltage higher than the 4.0 kV for 120 s. From the crystalline properties, the nanocrystalline silicon thin film after electron-beam annealing showed mainly (111), (220), and (311) orientations and a crystalline volume fraction (Xc) of 93.6%. The crystalline properties improved with increasing DC voltage for rapid annealing times. The electron-beam annealing method can be a powerful method for achieving rapid crystallization of amorphous materials.

Original languageEnglish
Pages (from-to)1091-1095
Number of pages5
JournalJournal of the Korean Physical Society
Issue number8
Publication statusPublished - 2014 Apr

Bibliographical note

Funding Information:
This work was supported by the New & Renewable Energy Technology Development Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) Grant funded by the Korea government Ministry of Knowledge Economy (20113020010010).This work was supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2009-0093823).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


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