Ultra-shallow P+/N junctions formed by SiF4 preamorphization and BF3 implantation using plasma immersion ion implantation

Erin C. Jones; Seongil Im; Nathan W. Cheung

Ultra-shallow P+/N junctions formed by SiF₄ preamorphization and BF₃ implantation using plasma immersion ion implantation

Erin C. Jones, Seongil Im, Nathan W. Cheung

Department of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Citations (Scopus)

Abstract

Sub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF₄ and BF₃ plasmas are implanted at energies from 4-6 keV and 2 keV, respectively. The amorphous region formed by SiF₄ implantation is shown to be effective in slowing B diffusion during at 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrystallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm² in the diode bulk at -5 V applied bias.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Publisher	Publ by Materials Research Society
Pages	255-259
Number of pages	5
ISBN (Print)	1558991743
Publication status	Published - 1993
Event	Beam Solid Interactions: Fundamentals and Applications - Boston, MA, USA Duration: 1992 Nov 30 → 1992 Dec 4

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	279
ISSN (Print)	0272-9172

Other

Other	Beam Solid Interactions: Fundamentals and Applications
City	Boston, MA, USA
Period	92/11/30 → 92/12/4

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{6576aa8781c2471e9fddbc5a5eb253e5,

title = "Ultra-shallow P+/N junctions formed by SiF4 preamorphization and BF3 implantation using plasma immersion ion implantation",

abstract = "Sub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4-6 keV and 2 keV, respectively. The amorphous region formed by SiF4 implantation is shown to be effective in slowing B diffusion during at 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrystallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.",

author = "Jones, {Erin C.} and Seongil Im and Cheung, {Nathan W.}",

year = "1993",

language = "English",

isbn = "1558991743",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "255--259",

booktitle = "Materials Research Society Symposium Proceedings",

note = "Beam Solid Interactions: Fundamentals and Applications ; Conference date: 30-11-1992 Through 04-12-1992",

}

Jones, EC, Im, S & Cheung, NW 1993, Ultra-shallow P+/N junctions formed by SiF₄ preamorphization and BF₃ implantation using plasma immersion ion implantation. in Materials Research Society Symposium Proceedings. Materials Research Society Symposium Proceedings, vol. 279, Publ by Materials Research Society, pp. 255-259, Beam Solid Interactions: Fundamentals and Applications, Boston, MA, USA, 92/11/30.

Ultra-shallow P+/N junctions formed by SiF₄ preamorphization and BF₃ implantation using plasma immersion ion implantation. / Jones, Erin C.; Im, Seongil; Cheung, Nathan W.
Materials Research Society Symposium Proceedings. Publ by Materials Research Society, 1993. p. 255-259 (Materials Research Society Symposium Proceedings; Vol. 279).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Ultra-shallow P+/N junctions formed by SiF4 preamorphization and BF3 implantation using plasma immersion ion implantation

AU - Jones, Erin C.

AU - Im, Seongil

AU - Cheung, Nathan W.

PY - 1993

Y1 - 1993

N2 - Sub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4-6 keV and 2 keV, respectively. The amorphous region formed by SiF4 implantation is shown to be effective in slowing B diffusion during at 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrystallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.

AB - Sub-100 nm P+/N junctions are fabricated by implanting wafers in the plasma immersion ion implantation system (PIII). Ions from SiF4 and BF3 plasmas are implanted at energies from 4-6 keV and 2 keV, respectively. The amorphous region formed by SiF4 implantation is shown to be effective in slowing B diffusion during at 10 sec, 1060°C rapid thermal anneal step. Channeling and transmission electron microscopy studies show the recrystallized amorphous region is comparable in quality to an unprocessed Si wafer, and the implantation and annealing sequence has no detrimental effects on the physical or electrical characteristics of fabricated devices. Diodes have forward ideality factors of 1.05 to 1.06 and reverse leakage as low as 2 nA/cm2 in the diode bulk at -5 V applied bias.

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M3 - Conference contribution

AN - SCOPUS:0027262040

SN - 1558991743

T3 - Materials Research Society Symposium Proceedings

SP - 255

EP - 259

BT - Materials Research Society Symposium Proceedings

PB - Publ by Materials Research Society

T2 - Beam Solid Interactions: Fundamentals and Applications

Y2 - 30 November 1992 through 4 December 1992

ER -