Ultra-low temperature poly-Si thin film transistor for plastic substrate

Do Young Kim; Jang Yeon Kwon; Ji Sim Jung; Kyung Bae Park; Hans S. Cho; Huck Lim; Jong Man Kim; Huaxing Yin; Xiaoxin Zhang; Takashi Noguchi; Takashi Noguchi

Ultra-low temperature poly-Si thin film transistor for plastic substrate

Do Young Kim, Jang Yeon Kwon, Ji Sim Jung, Kyung Bae Park, Hans S. Cho, Huck Lim, Jong Man Kim, Huaxing Yin, Xiaoxin Zhang, Takashi Noguchi, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200°C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 μm. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm ²/V·Sec on glass and 15 cm ²/V·sec on plastic by using ultra low temperature process at below 200°C, respectively.

Original language	English
Pages (from-to)	S61-S63
Journal	Journal of the Korean Physical Society
Volume	48
Issue number	SUPPL. 1
Publication status	Published - 2006 Jan

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

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title = "Ultra-low temperature poly-Si thin film transistor for plastic substrate",

abstract = "We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200°C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 μm. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm 2/V·Sec on glass and 15 cm 2/V·sec on plastic by using ultra low temperature process at below 200°C, respectively.",

author = "Kim, {Do Young} and Kwon, {Jang Yeon} and Jung, {Ji Sim} and Park, {Kyung Bae} and Cho, {Hans S.} and Huck Lim and Kim, {Jong Man} and Huaxing Yin and Xiaoxin Zhang and Takashi Noguchi and Takashi Noguchi",

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T1 - Ultra-low temperature poly-Si thin film transistor for plastic substrate

AU - Kim, Do Young

AU - Kwon, Jang Yeon

AU - Jung, Ji Sim

AU - Park, Kyung Bae

AU - Cho, Hans S.

AU - Lim, Huck

AU - Kim, Jong Man

AU - Yin, Huaxing

AU - Zhang, Xiaoxin

AU - Noguchi, Takashi

PY - 2006/1

Y1 - 2006/1

N2 - We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200°C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 μm. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm 2/V·Sec on glass and 15 cm 2/V·sec on plastic by using ultra low temperature process at below 200°C, respectively.

AB - We studied the fabrication of poly-Si TFT (thin film transistor) by using excimer laser crystallization of sputtered a-Si film at below 200°C. We could obtain the precursor a-Si film with low impurity gas content of 0.39 % by using Xe sputtering and poly-Si film with maximum grain size of 1 μm. We successfully fabricated poly-Si TFT with a field-effect mobility of 70 cm 2/V·Sec on glass and 15 cm 2/V·sec on plastic by using ultra low temperature process at below 200°C, respectively.

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AN - SCOPUS:33644538239

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SP - S61-S63

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - SUPPL. 1

ER -

Ultra-low temperature poly-Si thin film transistor for plastic substrate

Abstract

All Science Journal Classification (ASJC) codes

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