Ultra low sheet resistance on poly silicon film by excimer laser activation

Huck Lim; Huaxing Yin; Wenxu Xianyu; Jang Yeon Kwon; Xiaoxin Zhang; Hans S. Cho; Jong Man Kim; Kyung Bae Park; Do Young Kim; Ji Sim Jung; Takashi Noguchi; Takashi Noguchi

Ultra low sheet resistance on poly silicon film by excimer laser activation

Huck Lim, Huaxing Yin, Wenxu Xianyu, Jang Yeon Kwon, Xiaoxin Zhang, Hans S. Cho, Jong Man Kim, Kyung Bae Park, Do Young Kim, Ji Sim Jung, Takashi Noguchi, Takashi Noguchi

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We found that the sheet resistance (Rs) value of phosphorus-doped poly-Si film activated by excimer laser annealing (ELA) has a strong correlation with the crystallinity in the film. At the optimum ELA condition of 10 shots and 450 mJ/cm ², we achieved a very low Rs value of 60 ohm/sq. in poly-Si films. With laser activation, we could get much lower Rs than with conventional rapid thermal annealing (RTA), for silicon layers of the same crystallinity level. The active dopant diffusion is observed from the energy which is speculated to correspond to the near-complete-melting energy regime during laser irradiation.

Original language	English
Pages (from-to)	S47-S50
Journal	Journal of the Korean Physical Society
Volume	48
Issue number	SUPPL. 1
Publication status	Published - 2006 Jan

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

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title = "Ultra low sheet resistance on poly silicon film by excimer laser activation",

abstract = "We found that the sheet resistance (Rs) value of phosphorus-doped poly-Si film activated by excimer laser annealing (ELA) has a strong correlation with the crystallinity in the film. At the optimum ELA condition of 10 shots and 450 mJ/cm 2, we achieved a very low Rs value of 60 ohm/sq. in poly-Si films. With laser activation, we could get much lower Rs than with conventional rapid thermal annealing (RTA), for silicon layers of the same crystallinity level. The active dopant diffusion is observed from the energy which is speculated to correspond to the near-complete-melting energy regime during laser irradiation.",

author = "Huck Lim and Huaxing Yin and Wenxu Xianyu and Kwon, {Jang Yeon} and Xiaoxin Zhang and Cho, {Hans S.} and Kim, {Jong Man} and Park, {Kyung Bae} and Kim, {Do Young} and Jung, {Ji Sim} and Takashi Noguchi and Takashi Noguchi",

year = "2006",

month = jan,

language = "English",

volume = "48",

pages = "S47--S50",

journal = "Journal of the Korean Physical Society",

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T1 - Ultra low sheet resistance on poly silicon film by excimer laser activation

AU - Lim, Huck

AU - Yin, Huaxing

AU - Xianyu, Wenxu

AU - Kwon, Jang Yeon

AU - Zhang, Xiaoxin

AU - Cho, Hans S.

AU - Kim, Jong Man

AU - Park, Kyung Bae

AU - Kim, Do Young

AU - Jung, Ji Sim

AU - Noguchi, Takashi

PY - 2006/1

Y1 - 2006/1

N2 - We found that the sheet resistance (Rs) value of phosphorus-doped poly-Si film activated by excimer laser annealing (ELA) has a strong correlation with the crystallinity in the film. At the optimum ELA condition of 10 shots and 450 mJ/cm 2, we achieved a very low Rs value of 60 ohm/sq. in poly-Si films. With laser activation, we could get much lower Rs than with conventional rapid thermal annealing (RTA), for silicon layers of the same crystallinity level. The active dopant diffusion is observed from the energy which is speculated to correspond to the near-complete-melting energy regime during laser irradiation.

AB - We found that the sheet resistance (Rs) value of phosphorus-doped poly-Si film activated by excimer laser annealing (ELA) has a strong correlation with the crystallinity in the film. At the optimum ELA condition of 10 shots and 450 mJ/cm 2, we achieved a very low Rs value of 60 ohm/sq. in poly-Si films. With laser activation, we could get much lower Rs than with conventional rapid thermal annealing (RTA), for silicon layers of the same crystallinity level. The active dopant diffusion is observed from the energy which is speculated to correspond to the near-complete-melting energy regime during laser irradiation.

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ER -

Ultra low sheet resistance on poly silicon film by excimer laser activation

Abstract

All Science Journal Classification (ASJC) codes

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