Two-step growth of epitaxial InP layers by metal organic chemical vapor deposition

Young Dae Cho, In Geun Lee, Sun Wook Kim, Dong Hwan Jun, In Hye Choi, Hyuk Min Kwon, Chan Soo Shin, Kyung Ho Park, Won Kyu Park, Dae Hyun Kim, Dae Hong Ko

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/III sources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of InP epitaxial layers on GaAs substrates.

Original languageEnglish
Pages (from-to)5168-5172
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number5
Publication statusPublished - 2016 May

Bibliographical note

Publisher Copyright:
Copyright © 2016 American Scientific Publishers All rights reserved.

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


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