Abstract
In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/III sources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of InP epitaxial layers on GaAs substrates.
Original language | English |
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Pages (from-to) | 5168-5172 |
Number of pages | 5 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 16 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2016 May |
Bibliographical note
Publisher Copyright:Copyright © 2016 American Scientific Publishers All rights reserved.
All Science Journal Classification (ASJC) codes
- Bioengineering
- General Chemistry
- Biomedical Engineering
- General Materials Science
- Condensed Matter Physics