Two-step growth of epitaxial InP layers by metal organic chemical vapor deposition

Young Dae Cho; In Geun Lee; Sun Wook Kim; Dong Hwan Jun; In Hye Choi; Hyuk Min Kwon; Chan Soo Shin; Kyung Ho Park; Won Kyu Park; Dae Hyun Kim; Dae Hong Ko

doi:10.1166/jnn.2016.12262

Two-step growth of epitaxial InP layers by metal organic chemical vapor deposition

Young Dae Cho, In Geun Lee, Sun Wook Kim, Dong Hwan Jun, In Hye Choi, Hyuk Min Kwon, Chan Soo Shin, Kyung Ho Park, Won Kyu Park, Dae Hyun Kim, Dae Hong Ko

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/III sources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of InP epitaxial layers on GaAs substrates.

Original language	English
Pages (from-to)	5168-5172
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	16
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2016.12262
Publication status	Published - 2016 May

Bibliographical note

Publisher Copyright:
Copyright © 2016 American Scientific Publishers All rights reserved.

All Science Journal Classification (ASJC) codes

Bioengineering
Chemistry(all)
Biomedical Engineering
Materials Science(all)
Condensed Matter Physics

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10.1166/jnn.2016.12262

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abstract = "In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/III sources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of InP epitaxial layers on GaAs substrates.",

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AU - Cho, Young Dae

AU - Lee, In Geun

AU - Kim, Sun Wook

AU - Jun, Dong Hwan

AU - Choi, In Hye

AU - Kwon, Hyuk Min

AU - Shin, Chan Soo

AU - Park, Kyung Ho

AU - Park, Won Kyu

AU - Kim, Dae Hyun

AU - Ko, Dae Hong

PY - 2016/5

Y1 - 2016/5

N2 - In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/III sources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of InP epitaxial layers on GaAs substrates.

AB - In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/III sources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of InP epitaxial layers on GaAs substrates.

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JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

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ER -

Two-step growth of epitaxial InP layers by metal organic chemical vapor deposition

Abstract

Bibliographical note

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