The discovery of graphene has triggered immense interest in two-dimensional (2D) nanomaterials. However, the 2D growth of several layerstructured crystals such as graphene, MoS2, and black phosphorus is difficult and limited. Here, we report the gas-phase 2D growth of germanium (Ge) with a cubic structure to form Ge nanosheets (GeNSs) using the chemical vapor deposition method. Our investigation revealed that a diffusion limited aggregation (DLA) environment is essential for the 2D growth of Ge that induces a dendritic growth in the <110> direction and suppresses the growth in the  direction. The growth behavior was similar to the 2D growth of silicon reported previously. Thus, it can be concluded that a DLA environment is essential for the 2D growth of cubic structured materials. The electron density and mobility of GeNSs were found to be 1.3 × 1015 cm−3 and 792 cm2/Vs, respectively, and their resistivity varied with the intensity of light. [Figure not available: see fulltext.]
|Number of pages||6|
|Journal||Electronic Materials Letters|
|Publication status||Published - 2017 Jan 1|
Bibliographical notePublisher Copyright:
© 2017, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials