Trap density of states measured by photon probe on amorphous-InGaZnO thin-film transistors

Youn Gyoung Chang, Dae Hwan Kim, Gunwoo Ko, Kimoon Lee, Jae Hoon Kim, Seongil Im

Research output: Contribution to journalArticlepeer-review

23 Citations (Scopus)


Trap density of states (DOS) for two amorphous-InGaZnO thin-film transistors are measured by photoexcited charge-collection spectroscopy (PECCS); free charges trapped at a certain energy level are liberated by the corresponding energetic photons and then electrically collected at the source/drain electrodes. During this photoelectric process, the threshold voltage of TFT shifts and its magnitude provides the DOS information of charge traps. According to the PECCS analysis, the TFT with a channel deposited under high sputtering power appeared more stable than the other device prepared with low sputtering power, showing even less than ∼10-10cm -2 as its totally integrated trap density.

Original languageEnglish
Article number5708165
Pages (from-to)336-338
Number of pages3
JournalIEEE Electron Device Letters
Issue number3
Publication statusPublished - 2011 Mar

Bibliographical note

Funding Information:
Manuscript received December 7, 2010; accepted December 18, 2010. Date of publication February 4, 2011; date of current version February 23, 2011. This work was supported in part by KOSEF (NRL program, Grant 2010-8-0092), BK21 Project. The review of this letter was arranged by Editor W. T. Ng.

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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