Transport properties in (Ga,Mn)N nanowire field-effect transistors

We present the fabrication and transport characteristics of field-effect transistors based on single-crystalline (Ga,Mn)N nanowires with Mn concentrations of 2% and 5% prepared via a vapor-liquid-solid method. The (Ga,Mn)N nanowires with Mn concentrations of 2% and 5% configured as field-effect transistors exhibited n-type and p-type conductivities, respectively, and good electrical properties with an on/off current ratio of ∼10² and a subthreshold swing of 1.9-2.2 V/decade. For the (Ga,Mn)N nanowires with the Mn concentration of 5%, the negative magnetoresistance persisted up to room temperature. These results suggest the feasibility of applying dilute magnetic semiconductor nanowires in nanoscale electronics and spintronics.