Transport properties in (Ga,Mn)N nanowire field-effect transistors

Moon Ho Ham, Dong Keun Oh, Jae Min Myoung

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


We present the fabrication and transport characteristics of field-effect transistors based on single-crystalline (Ga,Mn)N nanowires with Mn concentrations of 2% and 5% prepared via a vapor-liquid-solid method. The (Ga,Mn)N nanowires with Mn concentrations of 2% and 5% configured as field-effect transistors exhibited n-type and p-type conductivities, respectively, and good electrical properties with an on/off current ratio of ∼102 and a subthreshold swing of 1.9-2.2 V/decade. For the (Ga,Mn)N nanowires with the Mn concentration of 5%, the negative magnetoresistance persisted up to room temperature. These results suggest the feasibility of applying dilute magnetic semiconductor nanowires in nanoscale electronics and spintronics.

Original languageEnglish
Pages (from-to)11480-11483
Number of pages4
JournalJournal of Physical Chemistry C
Issue number30
Publication statusPublished - 2007 Aug 2

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films


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