Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM-OLED display

Sang Hee Ko Park; Minki Ryu; Chi Sun Hwang; Shinhyuk Yang; Chunwon Byun; Jeong Ik Lee; Jaeheon Shin; Sung Min Yoon; Hye Yong Chu; Kyoung Ik Cho; Kimoon Lee; Min Suk Oh; Seongil Im

doi:10.1889/1.3069741

Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM-OLED display

Sang Hee Ko Park, Minki Ryu, Chi Sun Hwang, Shinhyuk Yang, Chunwon Byun, Jeong Ik Lee, Jaeheon Shin, Sung Min Yoon, Hye Yong Chu, Kyoung Ik Cho, Kimoon Lee, Min Suk Oh, Seongil Im

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

37 Citations (Scopus)

Abstract

We have fabricated 2.5" QCIF⁺ bottom emission AM-OLED with aperture ratio of 59.6% using fully transparent ZnO-TFT array and highly conductive oxide/metal/oxide electrode for the first time. The bias stability of ZnO TFT was improved by optimizing ZnO deposition and first gate insulator process. Plasma free process for the gate insulator makes ZnO TFT very stable under electrical bias stress. The Vth shift was less than 0.3 V after V _DS=25 V and V_GS=15 V application for 60 hours. Transparent ZnO TFT characteristics did not change noticeably under irradiation of visible light.

Original language	English
Pages (from-to)	629-632
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	39
Issue number	2
DOIs	https://doi.org/10.1889/1.3069741
Publication status	Published - 2008
Event	2008 SID International Symposium - Los Angeles, CA, United States Duration: 2008 May 20 → 2008 May 21

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1889/1.3069741

Cite this

Ko Park, S. H., Ryu, M., Hwang, C. S., Yang, S., Byun, C., Lee, J. I., Shin, J., Yoon, S. M., Chu, H. Y., Cho, K. I., Lee, K., Oh, M. S., & Im, S. (2008). Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM-OLED display. Digest of Technical Papers - SID International Symposium, 39(2), 629-632. https://doi.org/10.1889/1.3069741

@article{873ac0204a9643ac8e14d2b1258ad24e,

title = "Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM-OLED display",

abstract = "We have fabricated 2.5{"} QCIF+ bottom emission AM-OLED with aperture ratio of 59.6% using fully transparent ZnO-TFT array and highly conductive oxide/metal/oxide electrode for the first time. The bias stability of ZnO TFT was improved by optimizing ZnO deposition and first gate insulator process. Plasma free process for the gate insulator makes ZnO TFT very stable under electrical bias stress. The Vth shift was less than 0.3 V after V DS=25 V and VGS=15 V application for 60 hours. Transparent ZnO TFT characteristics did not change noticeably under irradiation of visible light.",

author = "{Ko Park}, {Sang Hee} and Minki Ryu and Hwang, {Chi Sun} and Shinhyuk Yang and Chunwon Byun and Lee, {Jeong Ik} and Jaeheon Shin and Yoon, {Sung Min} and Chu, {Hye Yong} and Cho, {Kyoung Ik} and Kimoon Lee and Oh, {Min Suk} and Seongil Im",

year = "2008",

doi = "10.1889/1.3069741",

language = "English",

volume = "39",

pages = "629--632",

journal = "Digest of Technical Papers - SID International Symposium",

issn = "0097-966X",

number = "2",

note = "2008 SID International Symposium ; Conference date: 20-05-2008 Through 21-05-2008",

}

TY - JOUR

T1 - Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM-OLED display

AU - Ko Park, Sang Hee

AU - Ryu, Minki

AU - Hwang, Chi Sun

AU - Yang, Shinhyuk

AU - Byun, Chunwon

AU - Lee, Jeong Ik

AU - Shin, Jaeheon

AU - Yoon, Sung Min

AU - Chu, Hye Yong

AU - Cho, Kyoung Ik

AU - Lee, Kimoon

AU - Oh, Min Suk

AU - Im, Seongil

PY - 2008

Y1 - 2008

N2 - We have fabricated 2.5" QCIF+ bottom emission AM-OLED with aperture ratio of 59.6% using fully transparent ZnO-TFT array and highly conductive oxide/metal/oxide electrode for the first time. The bias stability of ZnO TFT was improved by optimizing ZnO deposition and first gate insulator process. Plasma free process for the gate insulator makes ZnO TFT very stable under electrical bias stress. The Vth shift was less than 0.3 V after V DS=25 V and VGS=15 V application for 60 hours. Transparent ZnO TFT characteristics did not change noticeably under irradiation of visible light.

AB - We have fabricated 2.5" QCIF+ bottom emission AM-OLED with aperture ratio of 59.6% using fully transparent ZnO-TFT array and highly conductive oxide/metal/oxide electrode for the first time. The bias stability of ZnO TFT was improved by optimizing ZnO deposition and first gate insulator process. Plasma free process for the gate insulator makes ZnO TFT very stable under electrical bias stress. The Vth shift was less than 0.3 V after V DS=25 V and VGS=15 V application for 60 hours. Transparent ZnO TFT characteristics did not change noticeably under irradiation of visible light.

UR - http://www.scopus.com/inward/record.url?scp=54549127206&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=54549127206&partnerID=8YFLogxK

U2 - 10.1889/1.3069741

DO - 10.1889/1.3069741

M3 - Conference article

AN - SCOPUS:54549127206

SN - 0097-966X

VL - 39

SP - 629

EP - 632

JO - Digest of Technical Papers - SID International Symposium

JF - Digest of Technical Papers - SID International Symposium

IS - 2

T2 - 2008 SID International Symposium

Y2 - 20 May 2008 through 21 May 2008

ER -

Transparent ZnO thin film transistor for the application of high aperture ratio bottom emission AM-OLED display

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this