Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

C. H. Park; Seongil Im; Jungheum Yun; Gun Hwan Lee; Byoung H. Lee; Myung M. Sung

doi:10.1063/1.3269576

Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

C. H. Park, Seongil Im, Jungheum Yun, Gun Hwan Lee, Byoung H. Lee, Myung M. Sung

Department of Physics

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin _AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgO_x gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.

Original language	English
Article number	223506
Journal	Applied Physics Letters
Volume	95
Issue number	22
DOIs	https://doi.org/10.1063/1.3269576
Publication status	Published - 2009

Bibliographical note

Funding Information:
Authors acknowledge the financial support from KOSEF (NRL program: Grant No. 2009-8-0403), from MKE (the fundamental R&D Program for Core Technology of Materials: Grant No. 2008-8-1410 and the IT R&D Program for Smart window with transparent electronic devices: Grant No. 2008-8-0613), and Brain Korea 21 Program. C.H.P. thanks for the Seoul Science Fellowship and Seoam Fellowship.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3269576

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title = "Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate",

abstract = "We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgOx gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.",

author = "Park, {C. H.} and Seongil Im and Jungheum Yun and Lee, {Gun Hwan} and Lee, {Byoung H.} and Sung, {Myung M.}",

note = "Funding Information: Authors acknowledge the financial support from KOSEF (NRL program: Grant No. 2009-8-0403), from MKE (the fundamental R&D Program for Core Technology of Materials: Grant No. 2008-8-1410 and the IT R&D Program for Smart window with transparent electronic devices: Grant No. 2008-8-0613), and Brain Korea 21 Program. C.H.P. thanks for the Seoul Science Fellowship and Seoam Fellowship. ",

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doi = "10.1063/1.3269576",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

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AU - Park, C. H.

AU - Im, Seongil

AU - Yun, Jungheum

AU - Lee, Gun Hwan

AU - Lee, Byoung H.

AU - Sung, Myung M.

N1 - Funding Information: Authors acknowledge the financial support from KOSEF (NRL program: Grant No. 2009-8-0403), from MKE (the fundamental R&D Program for Core Technology of Materials: Grant No. 2008-8-1410 and the IT R&D Program for Smart window with transparent electronic devices: Grant No. 2008-8-0613), and Brain Korea 21 Program. C.H.P. thanks for the Seoul Science Fellowship and Seoam Fellowship.

PY - 2009

Y1 - 2009

N2 - We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgOx gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.

AB - We report on the fabrication of transparent top-gate ZnO nonvolatile memory thin-film transistors (NVM-TFTs) with 200 nm thick poly(vinylidene fluoride/trifluoroethylene) ferroelectric layer; semitransparent 10 nm thin AgOx and transparent 130 nm thick indium-zinc oxide (IZO) were deposited on the ferroelectric polymer as gate electrode by rf sputtering. Our semitransparent NVM-TFT with AgOx gate operates under low voltage write-erase (WR-ER) pulse of ±20 V, but shows some degradation in retention property. In contrast, our transparent IZO-gated device displays very good retention properties but requires anomalously higher pulse of ±70 V for WR and ER states. Both devices stably operated under visible illuminations.

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Transparent photostable ZnO nonvolatile memory transistor with ferroelectric polymer and sputter-deposited oxide gate

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